Allicdata Part #: | MJ15022GOS-ND |
Manufacturer Part#: |
MJ15022G |
Price: | $ 4.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 200V 16A TO3 |
More Detail: | Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Th... |
DataSheet: | MJ15022G Datasheet/PDF |
Quantity: | 329 |
1 +: | $ 3.67920 |
10 +: | $ 3.30624 |
100 +: | $ 2.70887 |
500 +: | $ 2.30599 |
1000 +: | $ 1.94481 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 3.2A, 16A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 8A, 4V |
Power - Max: | 250W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
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The MJ15022G is a type of Transistors - Bipolar (BJT) - Single. This type of transistor is widely used for many different applications, as it has a wide range of features that make it suitable for a variety of applications.
The MJ15022G is a dual-gate N-channel enhancement-mode MOSFET, featuring exceptionally low on-state drain-source resistances, which makes it extremely suitable for high frequency, low power applications. It was designed with the aim of reducing power loss and heat generation, making it efficient and reliable. Technically, the MJ15022G has an avalanche-rugged design, making it suitable for a wide range of applications, including consumer electronics, IT and power switching.
In terms of its working principle, the MJ15022G operates on the principle of electric field-effect transistors. To explain, the device consists of two metal-oxide-semiconductor (MOS) structures that lie in the same plane, the source and the drain. These two structures are connected by an electric field-effect material, which acts as the gate of the device. The electric field-effect is generated and modulated by an incoming electrical charge, thereby controlling the flow of electrons. As the electrons flow through the source and the drain, they also pass through the gate, which can be controlled by adjusting the voltage and/or current applied to it.
The MJ15022G is used for a variety of applications, including switching, power conversion, detection and amplification. It is especially useful for low-power low-voltage and high-frequency applications, such as wireless communications, radio frequency identification (RFID) and digital signal processing (DSP). Furthermore, it is used in high performance industrial applications, such as power switching, motor control, and switching. It is also used in low-noise amplifier (LNA) circuits, which are found in applications such as audio, television and radio systems.
In conclusion, the MJ15022G is a dual-gate N-channel enhancement mode MOSFET that is used for a variety of applications, including switching, power conversion, detection and amplification. It works on the principle of electric field-effect transistors, and is particularly suited for low-power, low-voltage high-frequency applications, such as wireless communications and RFID.
The specific data is subject to PDF, and the above content is for reference
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