MJE3055TG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJE3055TG is a kind of single bipolar junction transistor (BJT) which has been widely used in a range of applications. It is fabricated with base on epitaxial substrate for high voltage and breakdown voltage rating. It is designed for high beta applications and is commonly used as an amplifier, a switch, and an oscillator.

The rated collector current, collector-emitter voltage, and power dissipation of MJE3055TG are 40A, 600V, and 375W respectively. It features low collector-emitter saturation voltage, high hFE, very low off-state leakage current, and low power loss. The maximum DC collector-emitter voltage and collector current are 600V and 40A respectively. The maximum DC output current and peak forward-biased base current are 1A and 10A respectively. The switching frequency is up to 1Mhz. It is suitable for high frequency wide band amplifier, power switch, and a variety of continuous and pulse circuit application.

Working Principle:

MJE3055TG is a NPN type of transistor which uses three semiconductor layers comprising an emitter, a base and a collector. The base is much thinner than either the emitter or collector, and is normally lightly doped. This enables it to act as an insulator, preventing the movement of charge carriers between emitter and collector. When a suitable voltage is applied, it increases the base resistance, allowing current to flow between the emitter and collector, functioning as a switch.

In the inactive state, no current flows through the base and collector, with the only current flowing coming through the emitter and being returned through the collector. In active state, a voltage is applied to the base, allowing electrons to reach the collector, thus allowing current flow through the transistor. This behavior can be used to amplify signals as the output of the transistor is much larger than the input. MJE3055TG also features a current gain, called hFE, that ranges from 110 to 250, making it an ideal choice for a wide range of applications.

Conclusion:

MJE3055TG is a single bipolar junction transistor (BJT) widely applied in high current, high voltage, and high frequency applications, besides its excellent performances in current gain, saturation voltage, and power dissipation. Its simple construction, high current flow and low voltage output when in its active state makes it an ideal solution for a variety of applications, including amplifiers, switches, and oscillators.

The specific data is subject to PDF, and the above content is for reference