Allicdata Part #: | 497-2630-5-ND |
Manufacturer Part#: |
MJE350 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS PNP 300V 0.5A SOT-32 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 20.8W Thr... |
DataSheet: | MJE350 Datasheet/PDF |
Quantity: | 542 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 20.8W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | SOT-32-3 |
Base Part Number: | MJE350 |
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The MJE350 is a high power bipolar junction transistor (BJT) that has become very popular in a variety of applications. It is designed for applications where large amounts of power need to be switched on and off quickly and efficiently. The MJE350 is a single device, meaning that it has a single collector/emitter pair. This makes it suitable for any electronic circuit that requires high power.
The MJE350 has a wide range of applications, from automotive and industrial to consumer electronics. It is commonly used in DC-DC converters, Class-T amplifiers, switching power supplies, high-power lighting systems, and even solar power inverters. It can also be used in any circuit that requires high-power switching.
The MJE350 is a NPN power transistor and the current rating is 500 Amps. It has a maximum power dissipation rating of 600 Watts and a collector-emitter voltage rating of 500 Volts. The transistor also has a low saturation voltage of 0.7 volts. This makes it well-suited for high power applications where low power losses are desired.
When using the MJE350, it is important to understand the working principle of the device. The transistor is based upon the principle of majority-carrier injection. This means that current is injected into the base region of the device. This causes electrons to be pushed into the base region while holes are injected into the emitter region. These two factors create a large current gain, resulting in high switching power.
Another important factor to consider when using the MJE350 is the bias current. This is the current that is necessary to keep the base-emitter diode forward-biased. This current must be kept within a certain range to ensure that the transistor is properly working. If the current is too low, the transistor will not be able to switch the power it was designed for. Too high of a current can cause damage to the device.
The MJE350 has a wide range of applications and is a very reliable device. It is designed for high power switching, but can also be used in other applications that require high current, such as an amplifier. By understanding the working principle of the device and following the manufacturer’s instruction for proper bias current, the MJE350 can be used safely and efficiently.
The specific data is subject to PDF, and the above content is for reference
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