MJE350G

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The MJE350G is a continuously operated medium power NPN Silicon Planar Transistor. It is highly suitable for low to medium power switching applications and is popular for a number of additional applications including audio amplifiers and high frequency switching. This device is especially useful in reliable and robust applications in harsh electromechanical conditions. The MJE350G is an epitaxial semiconductor device with a distinctive yellow colour, and its NPN construction utilizes both diffusion technology and epitaxy.

MJE350G Application Field

One of the more common applications of the MJE350G Transistor is in automotive applications. It is especially useful as a low-frequency switching device due to its medium power rating and wide bandgap characteristics. Its reliability and robustness makes it suitable for engine control and other automotive applications that need high temperature operation. The MJE350G is also commonly used in audio amplifiers, where its medium power switching capabilities are handy for producing high-quality sound. Due to its superior ratings, the device can be used in a high-temperature environment of up to 175°C, making it ideal for use in harsh environmental conditions. With its wide bandgap and low thermal resistance, it is suitable for use in small signal applications as well.

MJE350G Working Principle

The working principle of the MJE350G Transistor is based on the flow of charge carriers (electrons and holes) between the collector and base regions. When a small current is applied to the base region, electrons and holes move towards it, and some of the electrons are captured by the base. As the base voltage is increased, more electrons are captured by the base, thereby increasing the current flow between the collector and emitter regions. The resistance between the collector and emitter regions, known as the output resistance, will decrease as the base voltage is increased, resulting in an increase in the output current. As the base voltage continues to increase, the rate of electron capture increases, thus resulting in a larger output current.

The amount of current that flows between the collector and emitter regions is also determined by the supply voltage. As the supply voltage increases, more charge carriers are present in the collector and emitter regions, thus leading to increases in the output current. The current gain of the device is also influenced by the base-emitter voltage, which is determined by the difference between the base and emitter voltages. As the voltage difference increases, the current gain increases, which can be seen as an increase in the output current at the same supply voltage.

The MJE350G Transistor also has a very low junction capacitance, which is responsible for its low noise operation. This is especially beneficial for high frequency switching applications such as audio amplifiers and other audio applications. Furthermore, the device has a very low thermal resistance, which helps to keep it running cooler even under high-temperature conditions. This low thermal resistance is also beneficial for applications requiring low operating temperature, such as sensitive electronic components.

The MJE350G is a highly reliable and robust device, making it suitable for applications in harsh environmental conditions. Its medium power rating and wide bandgap characteristics make it especially suitable for low to medium power switching applications. Furthermore, its low thermal resistance and wide bandgap allow it to be used in audio amplifiers and other audio applications, while its low junction capacitance is beneficial for low noise operation. This device is also ideal for automotive applications where its high temperature rating and robustness make it an ideal choice.

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