Allicdata Part #: | MJE5730OS-ND |
Manufacturer Part#: |
MJE5730 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 1A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Thr... |
DataSheet: | MJE5730 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 40W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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Transistors - Bipolar (BJT) - Single
MJE5730 Application Field and Working Principle
The MJE5730 is a high-voltage, high-current, unipolar, Darlington transistors. It is classified under transistors - bipolar (BJT) - single, given its single collector and emitter. The bipolar transistor’s structure consists of two diodes that are formed due to the presence of electrons holes, separated by a thin layer of an insulator or dielectric.}
The MJE5730 transistor contains a collector, an emitter, and a base. The base controls the current flow from the collector to the emitter. The current entering the base is amplified, resulting in a large current flowing into the collector and a smaller output current from the emitter. This current amplification is possible due to the high gain of the high-power transistor. Its gain is dependent on the amplification of the base current.
The MJE5730 can be used in amplifier and switching applications that require extremely high current. It offers superior performance in audio applications due to its low noise and high voltage-switching capability. It can also be used in high-power switching applications, such as inverters and power converters. This device has a low on-state voltage drop, which is critical in high-power switching applications.
The power rating of the MJE5730 is 500 watts, making it suitable for high-voltage and high-current applications. It features a low on-state voltage drop, which is important in high-power switching applications. It also features good thermal stability and immunity from electrostatic discharge (ESD), providing operation in a wide range of applications.
The working principle of the MJE5730 consists of two main parts: the current gain or beta, and the collector-emitter saturation voltage. The low on-state voltage drop of the MJE5730 is maintained due to the low saturation voltage, which reduces the amount of power lost when the transistor is in its on-state. When the base-emitter voltage increases, the base current increases, resulting in larger collector current and lower saturation voltage. The current gain of the MJE5730 is given by the ratio of the collector current to the base current, known as the beta.
The MJE5730 is an excellent choice for amplifier and switching applications due to its high power rating and low saturation voltage. It is also good for high-power switching applications, such as inverters and power converters. Its features make it suitable for audio applications due to its low noise and high voltage-switching capability. This device is an excellent choice for high-power switching applications, given its low on-state voltage drop and high collector current.
The specific data is subject to PDF, and the above content is for reference
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