MJE5850G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJE5850G is a discrete transistor device designed for high voltage, high speed switching applications in the medium to large signal range. It is classified as a Single Bipolar Junction Transistor, which simply means that it is composed of a single PN junction, which acts as a switch between two electrodes. The device’s main function is to amplify the current flowing through it, and its operation is based on the principles of transistor physics.

The MJE5850G is commonly used in high power circuits requiring high voltage, such as power supplies, motor control systems, and other complex industrial applications. It offers several advantages over other types of transistors, including higher voltage gain, a reduction in thermal dissipation, and improved frequency response. Its wide range of operating voltages makes it suitable for a wide range of applications in consumer, automotive, industrial, and many other sectors.

In operation, the MJE5850G transistor amplifies the signal voltage applied to its base by a common-emitter configuration. This signal is then passed on to the collector and emitter electrodes. When the signal voltage applied to the base of the transistor becomes positive, the current flowing through the collector and emitter layers will increase, thus amplifying the signal. Conversely, when the base voltage becomes negative, the current through the transistor will decrease, thereby decreasing the signal.

The MJE5850G has a relatively high voltage gain, which is a measure of the ratio between the signal strength at the input of the transistor and the output signal. The typical voltage gain of the device is 200, which means that the output from the transistor is 200 times larger than the signal fed into the base of the transistor. This results in large signal amplification, which is essential for high-power applications.

The device’s frequency response is also impressive. Its response time is very fast, which makes it ideal for high-power switching operations that require quick on/off or high/low switching times. It also features a low input capacitance, meaning that it can handle higher frequency signals without introducing any noise into the signal path. This makes it well suited for RF applications, such as in radio frequency amplifiers or microwave circuits.

In summary, the MJE5850G transistor is a reliable high voltage, high speed switching device optimized for use in medium to large signal range applications. It features a high voltage gain, a fast response time, and a low input capacitance, which makes it ideal for high-power switching operations, radio frequency amplifiers, and other complex industrial applications. The device’s ease of use, cost-effectiveness, and superior performance make it a popular choice in the consumer, automotive, and industrial sectors.

The specific data is subject to PDF, and the above content is for reference