Allicdata Part #: | MJE5731-ND |
Manufacturer Part#: |
MJE5731 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 350V 1A TO-220AB |
More Detail: | Bipolar (BJT) Transistor PNP 350V 1A 10MHz 40W Thr... |
DataSheet: | MJE5731 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 40W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The MJE5731 is a medium power, NPN, bipolar junction transistor (BJT). These transistors feature high current gain, and are commonly used in audio applications. The MJE5731 is suitable for use in a wide range of general-purpose applications such as signal amplification, audio amplifiers, motor control circuits and power supplies.
The MJE5731 is a low voltage, NPN, bipolar junction transistor with a low current gain. It features high power dissipation, low voltage drop, high input capacitance and low noise. The device is available in a TO-126 package and is available in various power ratings and current gains.
The MJE5731 is an NPN Bipolar Junction Transistor with "low Vcesat dual-transistor output stages". It is manufactured using high-frequency planar technology and features the latest advances in transistor architecture. The device features very low reverse current leakage, low input bias current and high gain performance.
The working principle of the MJE5731 is based on the fact that when a small current is passed through the base terminal, a much larger current is produced at the collector terminal. This principle is known as current amplification, or current gain. The current gain of the MJE5731 is usually denoted by the parameter hFE. The typical value of hFE for the MJE5731 is in the range of 50 to 100.
The MJE5731 is mainly used in audio applications due to its low distortion, high gain performance and its ability to drive high current loads. It is also used in power switching and control applications. The MJE5731 can provide efficient turn-on/off response and fast switching between high and low logic levels. Furthermore, its low base drive requirement makes it suitable for use in portable devices.
In summary, the MJE5731 is a medium power, NPN, bipolar junction transistor (BJT) with low current gain, low Vcesat dual-transistor output stages, and high current gain (hFE). It is most commonly used in audio applications, and is also suitable for use in power switching and control applications.
The specific data is subject to PDF, and the above content is for reference
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