Allicdata Part #: | MJF3055GOS-ND |
Manufacturer Part#: |
MJF3055G |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 90V 10A TO220FP |
More Detail: | Bipolar (BJT) Transistor NPN 90V 10A 2MHz 2W Throu... |
DataSheet: | MJF3055G Datasheet/PDF |
Quantity: | 1076 |
1 +: | $ 1.00170 |
10 +: | $ 0.89775 |
100 +: | $ 0.69987 |
500 +: | $ 0.57815 |
1000 +: | $ 0.45644 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 90V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
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Transistors - Bipolar (BJT) - Single
The MJF3055G is a high-tech semiconductor device that is known as a bipolar junction transistor (BJT). This type of transistor is mainly used in electronic applications where it is necessary to switch off, control, and regulate electrical signals. It is commonly used in amplification circuits, such as audio amplifiers and radio frequency (RF) amplifiers. Its most widely used application is in switching circuits, as it is able to accurately control electric current and voltage in a circuit.
This specific type of transistor is of the NPN type, meaning that it is composed of three sections: the base, collector and emitter. The base is the control gate, and determines how much current will flow through the other two sections of the transistor. The collector is the part that gathers the electrical current, while the emitter is the aspect that releases the electrical current. In the model of the MJF3055G transistor, the collector is connected to a positive voltage source and the emitter to a ground or a negative voltage source.
These NPN transistors can be used for both amplifying and switching functions. They are not affected by strong external signals and can provide dependable performance. For example, when an electrical current is placed over the base, allowing a current to flow through the collector and emitter, the device amplifies the current. It can also be used as a switch, meaning that the transistor can be switched on and off in a very fast and efficient way, making it ideal for a wide range of electronic applications.
The MJF3055G has a number of features that make it ideal for many forms of electronic application. It is a medium-power transistor and is able to operate at currents up to 200mA. It also has a low on-state voltage, with the maximum voltage dropping to only 0.9V for a maximum current of 100mA. Furthermore, the collective and emitter terminals are extremely resistive to heat, with a power dissipation of 800mW.
In conclusion, the MJF3055G bipolar junction transistor is a versatile device which is suited to many forms of electrical applications. It is capable of amplifying electrical signals and switching them on and off quickly and efficiently. Its medium power, low voltage, and high heat resistance makes it a highly durable component that can be relied on for a variety of purposes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MJF3055 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 90V 10A TO220FP... |
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