MJF3055G Allicdata Electronics
Allicdata Part #:

MJF3055GOS-ND

Manufacturer Part#:

MJF3055G

Price: $ 1.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 90V 10A TO220FP
More Detail: Bipolar (BJT) Transistor NPN 90V 10A 2MHz 2W Throu...
DataSheet: MJF3055G datasheetMJF3055G Datasheet/PDF
Quantity: 1076
1 +: $ 1.00170
10 +: $ 0.89775
100 +: $ 0.69987
500 +: $ 0.57815
1000 +: $ 0.45644
Stock 1076Can Ship Immediately
$ 1.11
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 2W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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Transistors - Bipolar (BJT) - Single

The MJF3055G is a high-tech semiconductor device that is known as a bipolar junction transistor (BJT). This type of transistor is mainly used in electronic applications where it is necessary to switch off, control, and regulate electrical signals. It is commonly used in amplification circuits, such as audio amplifiers and radio frequency (RF) amplifiers. Its most widely used application is in switching circuits, as it is able to accurately control electric current and voltage in a circuit.

This specific type of transistor is of the NPN type, meaning that it is composed of three sections: the base, collector and emitter. The base is the control gate, and determines how much current will flow through the other two sections of the transistor. The collector is the part that gathers the electrical current, while the emitter is the aspect that releases the electrical current. In the model of the MJF3055G transistor, the collector is connected to a positive voltage source and the emitter to a ground or a negative voltage source.

These NPN transistors can be used for both amplifying and switching functions. They are not affected by strong external signals and can provide dependable performance. For example, when an electrical current is placed over the base, allowing a current to flow through the collector and emitter, the device amplifies the current. It can also be used as a switch, meaning that the transistor can be switched on and off in a very fast and efficient way, making it ideal for a wide range of electronic applications.

The MJF3055G has a number of features that make it ideal for many forms of electronic application. It is a medium-power transistor and is able to operate at currents up to 200mA. It also has a low on-state voltage, with the maximum voltage dropping to only 0.9V for a maximum current of 100mA. Furthermore, the collective and emitter terminals are extremely resistive to heat, with a power dissipation of 800mW.

In conclusion, the MJF3055G bipolar junction transistor is a versatile device which is suited to many forms of electrical applications. It is capable of amplifying electrical signals and switching them on and off quickly and efficiently. Its medium power, low voltage, and high heat resistance makes it a highly durable component that can be relied on for a variety of purposes.

The specific data is subject to PDF, and the above content is for reference

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