MJF31C Allicdata Electronics
Allicdata Part #:

MJF31C-ND

Manufacturer Part#:

MJF31C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 3A TO-220FP
More Detail: Bipolar (BJT) Transistor NPN 100V 3A 3MHz 2W Throu...
DataSheet: MJF31C datasheetMJF31C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

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The MJF31C is a type of single bipolar junction transistor (BJT). It is a current controlled device, relying on a current to control current within its circuit. As expected with a BJT, the MJF31C connects two n-type and one p-type semiconductor, allowing the switching of current between two input signals in the same direction (across two transistor electrodes).

The MJF31C is usually found in applications related to low noise amplification of small signals. Its low noise characteristics makes it suitable for use in amplifying signals within circuits, and in controlling the amount of power delivered to connected external devices. Common examples of MJF31C use are switching devices with low signal input levels, as well as detecting small signals in circuit-controlled CMOS devices.

When using an MJF31C, the voltage supplied by the power source (VCC) affects its operation. The power source should be able to supply sufficient voltage to the device to ensure it is able to operate at its rated performance. To ensure proper operation, use the highest rated voltages recommended by the datasheet.

The working principle behind the MJF31C can be credited to the fact that BJTs rely on a current to control current. A small input current flows enters the base of the transistor and then down to the collector. This current draws out a larger output current from the emitter. By doing so, the voltage seen at the emitter of the transistor can be varied by a small input signal, allowing the transistor to act as an amplifier.

In relation to this device, the current-amplifying gain of the MJF31C is usually specified to be between 20 and 100. The higher the gain, the greater the amplification effect. The main use of this device is the low noise, low-level signal amplification, enabled by its moderate voltage gains. The base-emitter junction of the MJF31C has both a reverse- and a forward-biasing configuration, allowing for bi-polar switching of the transistor.

In conclusion, the MJF31C is a single-bipolar junction transistor, suitable for use in low noise, low-level signal amplification. Its current-amplifying gain is between 20 and 100, and the device is capable of both forward- and reverse-biasing switching. The power source should be able to supply sufficient voltage to the device to ensure proper operation and performance.

The specific data is subject to PDF, and the above content is for reference

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