Allicdata Part #: | MJF31CGOS-ND |
Manufacturer Part#: |
MJF31CG |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 3A TO-220FP |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 2W Throu... |
DataSheet: | MJF31CG Datasheet/PDF |
Quantity: | 560 |
1 +: | $ 0.69300 |
10 +: | $ 0.61740 |
100 +: | $ 0.48126 |
500 +: | $ 0.39754 |
1000 +: | $ 0.31385 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
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The MJF31CG is a type of bipolar junction transistors (BJT) that is categorized as a single transistor. It is used for low-voltage and low-power applications such as audio amplifiers, high-frequency switch drivers, and low frequency oscillators.
The MJF31CG is typically constructed with three layers of semiconductor material. These three layers are the emitter, base and collector. The emitter layer is typically made of doped N-type silicon and is where the electrons flow from. The base layer is typically formed from a thin P-type silicon film. This is the layer that allows electrons to flow from the emitter to the collector. The collector is typically made of doped P-type silicon and is where the electrons flow to. The base is typically insulated from the other two layers.
The working principle of the MJF31CG is based on the concept of electron flow. Electrons from the emitter layer move through the base layer and into the collector layer. When the electric voltage applied to the base layer is larger than the base-emitter voltage level, the electrons start passing through the two diode junctions, allowing current to flow from the emitter to the collector. This is known as the BJT\'s forward bias and it is the fundamental principle that allows the BJT to amplify electrical signals.
The application field of the MJF31CG is very wide and includes amplifiers, switch drives, oscillators, and other electronic circuits that require medium transconductance. The ability to amplify electrical signals allows this type of transistor to be used in many different types of electronic devices. In addition to this, it can also be used in various power applications and is often used to drive a wide range of actuators and relays.
The MJF31CG offers a number of advantages over other types of transistors. It is relatively easy to manufacture, requires low power consumption, and is considered to be a very robust device. In addition, its wide application range and low footprint means that it is an ideal choice for most modern electronics designs.
The MJF31CG is an important component for a wide range of applications, from audio amplifiers to switch drivers. Its ability to amplify electrical signals, its low power consumption, and its ability to drive various actuators as well as relays makes it a great choice for many different types of electronic circuits. Its many advantages ensure that it will remain a popular choice in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MJF3055 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 90V 10A TO220FP... |
MJF31CG | ON Semicondu... | 0.76 $ | 560 | TRANS NPN 100V 3A TO-220F... |
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MJF32CG | ON Semicondu... | 0.68 $ | 944 | TRANS PNP 100V 3A TO-220F... |
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