Allicdata Part #: | MJF44H11OS-ND |
Manufacturer Part#: |
MJF44H11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 10A TO220FP |
More Detail: | Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Thro... |
DataSheet: | MJF44H11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
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The MJF44H11 is a single bipolar junction transistor (BJT) available in both the JEDEC TO-92-3 and the SOT-23 packages. It is a NPN transistor with a maximum collector-base voltage of 30V, a maximum collector-emitter voltage of 25V, and a maximum power dissipation of 500mW. Its fast switching times, high breakdown voltage, and low ON-state resistance make it an ideal choice for a wide range of applications.
The working principle behind the MJF44H11 is based on the flow of electrons between the base, collector and emitter in the NPN transistor. An increase in the current through the base causes an increase in the collector-emitter current. This is due to the electrons that enter the base and are then attracted to the more positive region of the collector, thus increasing the current flowing through the collector and emitter. This is known as the transistor’s current gain and is denoted by the hFE symbol.
The MJF44H11’s primary application is in switching circuit applications. As its current gain is high, it is capable of driving high currents with the required input current being much lower. It is also used in signal processing circuits and for voltage amplification. In switching circuits, the MJF44H11 is used to control the current flow through a load using a small control signal. This is achieved by using the transistor as a switch. When the control signal is at a high voltage, the transistor is “ON” and current flows through the load. When the control signal is at a low voltage, the transistor is “OFF” and current does not flow through the load.
In signal processing circuits, the MJF44H11 is used to amplify signals. The control signal is routed through an input circuit to the Base of the transistor. Depending on the input signal’s voltage, the transistor will behave as either an amplifier or an attenuator. If the input voltage is high, the transistor will amplify the signal and output a larger voltage. If the input voltage is low, the transistor will attenuate the signal and output a smaller voltage.
The MJF44H11 is also used in voltage amplification circuit applications. These circuits use the transistor as an amplifier for DC voltages. The input voltage is applied to the base of the transistor, which then amplifies the signal and outputs a higher voltage on its collector-emitter junction. This is useful in applications such as DC motors, where the voltage needs to be amplified to drive the rotating part.
In conclusion the MJF44H11 is a single bipolar junction transistor that is suitable for a wide range of applications. Its fast switching times, high breakdown voltage, and low ON-state resistance make it an ideal choice for switching, signal processing, and voltage amplification circuits.
The specific data is subject to PDF, and the above content is for reference
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