MJF45H11G

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	2W
Frequency - Transition:	40MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP

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MJF45H11G Application Field and Working PrincipleThe MJF45H11G is a general-purpose NPN (Negative-Positive-Negative) bipolar junction transistor produced by Vishay. It is a multi-gate field observation HV floating-gate low-voltage field-effect transistor (FET). This device is designed for general purpose applications, such as for switching and for amplifying signals. This article provides an overview of the MJF45H11G application field, its working principle, and how it works in comparison to other field effect transistors such as the MOSFET.Application Fields of the MJF45H11G The MJF45H11G is a general-purpose NPN bipolar junction transistor suitable for use in various applications. It is suitable for powering loads such as relays, motors, lamps, and LEDs, as well as for signal amplification, signal buffering, or voltage division. It is frequently used for analog signal applications and for switching purposes. The MJF45H11G is also well suited for use in high-voltage applications due to its superior robustness.Working PrincipleNPN bipolar junction transistors (BJT) like the MJF45H11G are three-terminal devices with an emitter, a base and a collector. The terminals are often labeled as E, B and C for ease of reference. The transistors operate on the principle of base conduction which Occurs when a current is passed through the base terminal which creates an electron flow from emitter to collector. This process is called “forward biasing”. The MJF45H11G also operates on the principle of reverse biasing where the base current is reversed and electron flow is blocked, preventing current from flowing between collector and emitter.Comparison to MOSFETsBipolar junction transistors (BJTs) such as the MJF45H11G are often compared to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Both BJTs and MOSFETs are used in digital circuits and amplifying applications, but BJTs are typically used in digital circuits which require the switching of high currents and low voltage signals, such as in switching transistor applications. In contrast MOSFETs are more suitable for switching high voltage and low current signals, and are typically used for amplifying audio signals. In conclusion, both BJTs and MOSFETs are useful in a variety of digital circuit applications, but each has it own set of strengths and weaknesses.

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