MJF45H11 Allicdata Electronics
Allicdata Part #:

MJF45H11-ND

Manufacturer Part#:

MJF45H11

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 10A TO-220FP
More Detail: Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Thro...
DataSheet: MJF45H11 datasheetMJF45H11 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 2W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJF45H11 is a single bipolar junction transistor (BJT) built on an NPN architecture. It is commonly used for power amplification and switching applications. Its many features and small footprint make it an excellent choice for a wide range of projects.

The MJF45H11 is a low-Vce, high-current bipolar transistor manufactured in a small TO-92 package. This makes it a great choice for applications where a discrete part is required but there is limited space for installation. It is designed for use in power supplies and linear, audio and other applications requiring high-current switching capabilities.

In addition to its small form factor, the MJF45H11 is also noteworthy for its high frequency operation up to 100 MHz, its wide Gain Bandwidth product of up to 30 MHz, and its high collector current of up to 700 mA. It is also capable of handling a maximum continuous collector current of 500 mA and a peak collector current of up to 600 mA. This is thanks to its high voltage ratings of up to 30 V as well as its low Vce (Transistor Collector-Emitter Voltage) on characteristics of up to 1.3 V. The MJF45H11 also offers excellent thermal stability and good thermal properties.

In terms of its operating principles, the MJF45H11 is an NPN type BJT. This means that current will flow from the collector to the emitter when a forward voltage (VCE) is applied to the base. This is what allows for a controlled current to flow between collector and emitter. The base terminal also provides the device with gate sensitivity, allowing for current gain or amplification as well as switching. The device also has controlled thermal stability due to its collector to emitter saturation voltage rating, which is slightly above its1V VCE rating.

The MJF45H11 has a wide range of application areas which take advantage of the device\'s features. It is particularly well suited for use in radio frequency (RF) signal amplifiers, linear and audio amplifiers, and power supplies. It is also commonly used in consumer electronics and automotive control systems. For example, it is often used in audio amplifiers, such as automobile sound systems as well as home stereo amplifiers.

The MJF45H11 also makes an excellent choice for applications requiring continued operation in over-temperature conditions, such as automotive circuits and automotive engine control units. The device\'s high voltage ratings, wide Gain Bandwidth product, and excellent thermal properties allow it to operate continuously at high temperatures. The device\'s low power consumption and high reliable operation also make it ideal for applications requiring low cost and high efficiency.

The MJF45H11 is an ideal choice for a variety of power amplification and switching applications. Its small footprint and excellent thermal properties make it great for applications requiring discrete parts and limited space. The device is also suitable for use in RF signal amplifiers, linear and audio amplifiers, and power supplies thanks to its wide Gain Bandwidth product and high collector current ratings. The device is also highly reliable in extreme temperatures, and it offers low power consumption and high efficiency.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MJF4" Included word is 6
Part Number Manufacturer Price Quantity Description
MJF47 ON Semicondu... 0.0 $ 1000 TRANS NPN 250V 1A TO220FP...
MJF44H11 ON Semicondu... 0.0 $ 1000 TRANS NPN 80V 10A TO220FP...
MJF45H11 ON Semicondu... 0.0 $ 1000 TRANS PNP 80V 10A TO-220F...
MJF44H11G ON Semicondu... -- 2369 TRANS NPN 80V 10A TO220FP...
MJF45H11G ON Semicondu... 1.09 $ 1578 TRANS PNP 80V 10A TO-220F...
MJF47G ON Semicondu... 0.99 $ 690 TRANS NPN 250V 1A TO220FP...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics