Allicdata Part #: | MJH11017GOS-ND |
Manufacturer Part#: |
MJH11017G |
Price: | $ 2.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 150V 15A TO247 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 150V 15A... |
DataSheet: | MJH11017G Datasheet/PDF |
Quantity: | 120 |
1 +: | $ 2.24910 |
10 +: | $ 2.02167 |
100 +: | $ 1.65652 |
500 +: | $ 1.41016 |
1000 +: | $ 1.18929 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 150mA, 15A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 10A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The MJH11017G is a single bipolar junction transistor (BJT) specifically designed for use in high-performance, high-frequency switching applications. It is a highly durable, reliable and easy-to-use component that can be used in a wide range of systems from switching power supplies to audio and video systems. In order to understand its applications and working principles, this article will look at the features and characteristics of the MJH11017G, as well as its most common applications.
The MJH11017G is a medium power NPN BJT that is constructed with a double-diffused mesa structure. Its maximum collector current is 1 A and its maximum collector dissipation is 500 mW. It has a maximum voltage rating of 400 V and its collector-emitter voltage is guaranteed at 25 V. It has a high current gain of 400 and a low saturation voltage of 0.3 V, allowing it to operate efficiently while handling high-power loads. It also has a fast switching speed, making it well-suited for high-frequency applications.
In terms of its applications, the MJH11017G can be used in a wide range of circuits and systems. It is highly durable, making it well-suited for continuous switching applications such as in switching power supplies. It can be used in a variety of audio and video systems as well as in automotive and industrial applications, where its maximum power dissipation makes it an ideal choice. It can also be used in high-frequency switching applications such as in powerful amplifiers and HVAC systems.
The MJH11017G relies on a few key operating principles in order to function properly. First, it is a three-layered semiconductor structure that relies on the flow of electrons to create a flow of current. When a voltage is applied to its base, the electrons move through layers, creating a potential difference between the collector and emitter points. This potential difference is known as the transistor\'s base-emitter voltage and makes the transistor switch on or off. Additionally, the MJH11017G dissipates the heat generated by the current flow, allowing it to remain stable and reliable over time.
In conclusion, the MJH11017G is a single bipolar junction transistor (BJT) specifically designed for use in high-performance, high-frequency switching applications. It is highly durable, reliable and easy-to-use, making it an ideal component for a wide range of applications. Its features and characteristics make it well-suited for switching power supplies, audio and video systems, automotive and industrial applications, and powerful amplifiers and HVAC systems. Finally, the MJH11017G relies on a few key operating principles, such as the flow of electrons from its base and its heat dissipation, to function properly.
The specific data is subject to PDF, and the above content is for reference
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