
Allicdata Part #: | MJH11021OS-ND |
Manufacturer Part#: |
MJH11021 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 250V 15A TO218 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 250V 15A... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 150mA, 15A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 10A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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MJH11021 is a high power NPN transistor used mainly for high voltage and/or high current switching applications. It has an Emitter-Base Voltage of 9V and Collector-Base Voltage of 200V. It also has an output power rating of 130W, collector current rating of 4A and collector-emitter voltage of 750V. This transistor is mainly used in industrial and commercial applications.
The MJH11021 is a single bipolar junction transistor (BJT). A BJT is a semiconductor device composed of three terminals: the emitter, the base, and the collector. It is constructed so that when the base terminal is forward biased, with a voltage applied between emitter and collector terminals, the appropriate current direction is applied to the emitter and collector. This current flow permits energy to be transferred from the emitter to the collector.
There are two types of bipolar transistors: N-type and P-type. The MJH11021 is an N-type bipolar transistor. N-type transistors rely on the movement of electrons from the N-region to the P-region to create the current. When the base is forward biased, the electrons in the N-region are pushed by the electric field towards the P-region. As the electrons flow from the N-region to the P-region, it creates a current flow.
The working principle of the MJH11021 is that it uses the electric field created by the application of a voltage between the emitter and the collector and the current flowing between these two contacts to drive the current to the base. The current flow between the base and collector of the transistor is proportional to the current flowing between the emitter and collector. The current through the emitter is amplified at the collector. This amplification is achieved by the current gain of the transistor.
The MJH11021 is used in various applications such as high frequency switches, high power amplifiers, high power switching circuits and motor control circuits. It is also used as a driver in motor control applications, light dimmers and Pulse-Width Modulation (PWM) control systems. The MJH11021 is an ideal device for high current and/or high voltage applications since it has a large collector-base voltage, high collector current, high output power and high switching speeds.
In conclusion, the MJH11021 is a single bipolar junction transistor mainly designed for high voltage and high current applications. It has a high output power rating, collector-emitter voltage, and collector current rating. The working principle of the MJH11021 is that it uses the electric field and the current flow between the emitter and collector to drive the current to the base. The current flow is then amplified at the collector and is ideal for high voltage and high current applications.
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