MJH11022G Allicdata Electronics
Allicdata Part #:

MJH11022GOS-ND

Manufacturer Part#:

MJH11022G

Price: $ 2.66
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 250V 15A TO247
More Detail: Bipolar (BJT) Transistor NPN - Darlington 250V 15A...
DataSheet: MJH11022G datasheetMJH11022G Datasheet/PDF
Quantity: 1161
1 +: $ 2.41920
10 +: $ 2.17161
100 +: $ 1.77943
500 +: $ 1.51482
1000 +: $ 1.27756
Stock 1161Can Ship Immediately
$ 2.66
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Power - Max: 150W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The MJH11022G is a single-geometry Bipolar Junction Transistor (BJT). It is designed for use in a variety of applications, from power switching to signal amplification. As a power-switching device, it is capable of taking either AC or DC loads, switching them fast with high-linearity performance. As an amplifier, the MJH11022G provides efficient amplification of signals with low noise, providing wide bandwidth without needing a large footprint.

The MJH11022G\'s design is based around its three-layer semiconductor structure. The base layer is made of semiconductor material, sandwiched between two emitter layers underneath. Each emitter layer is connected to its own collector layer, forming the collector\'s majority carriers. When a current flows through the base layer, the majority carriers at the collector\'s layers are recombined and the voltage drop between the collector and emitter terminals causes the BJT to be in the "on" state.

Since the MJH11022G is a BJT, its transistor action follows the behavior of a current-controlled current source. The current between the collector and emitter terminals varies in proportion to the current applied to the base/emitter junction. This property makes it a suitable choice for use in many amplifying and switching applications.

The MJH11022G is comprised of an NPN type of device, with a current gain (β) of 100 or more. This high gain is what makes it an excellent choice for most applications requiring power switching and signal amplification. With a wide bandwidth from DC to 250MHz, the BJT can easily handle both analog and digital signals. Its power-handling ability is remarkable, with it able to take up to 50W in AC and 25W in DC.

In addition to its excellent switching and power-handling characteristics, the MJH11022G also offers certain protection features such as thermal protection and short-circuit protection. These protection features help make the MJH11022G a reliable and safe choice for even the most sensitive systems.

In conclusion, the MJH11022G is an excellent choice for many applications requiring power switching or signal amplification. It is made of an NPN type of device, has a current gain of 100 or more, and can handle up to 50W in AC and 25W in DC. It also has thermal and short-circuit protection, making it a reliable and safe choice. With its wide bandwidth, it is suitable for digital and analog signals, while its small footprint makes it an attractive choice for those looking for power-handling solutions.

The specific data is subject to PDF, and the above content is for reference

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