MM3Z12VST1G Discrete Semiconductor Products |
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Allicdata Part #: | MM3Z12VST1GOSTR-ND |
Manufacturer Part#: |
MM3Z12VST1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 12V 200MW SOD323 |
More Detail: | Zener Diode 12V 300mW ±2% Surface Mount SOD-323 |
DataSheet: | MM3Z12VST1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±2% |
Power - Max: | 300mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | MM3Z12 |
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This article will discuss the application field and working principle of the MM3Z12VST1G. It is categorized as Diodes - Zener - Single.
The MM3Z12VST1G is a Zener diode that is designed for applications that require fast switching speeds and low power consumption. It is commonly used in local area networks, cellular phones and other communication applications. Additionally, it can be found in hobby projects such as model airplanes and robotics.
The MM3Z12VST1G is a single-channel (2-pin) device that operates at 12 volts and has a maximum power rating of 1 watt. It is capable of withstanding reverse voltages up to 16V and is rated for a maximum frequency of 8MHz. The combination of low power consumption, extremely fast switching and high efficiency makes this diode attractive to manufacturers.
The principle of operation of the diode is very simple. In a Zener diode, holes injected from the p-side realize the breakdown voltage. With reverse biasing applied to the diode, holes and electrons will recombine and form electron-hole pairs under the surface. This process of recombination will generate heat, which carries dependence to the applied voltage. Once the applied voltage reaches the value of the breakdown voltage, the mechanism starts to act and typically provides a large amplification.
When the Zener diode is in its “on” state, it acts as an open circuit. The maximum current that can flow through a Zener diode is determined by its power rating. When the Zener diode is in its “off” state, it acts as a closed circuit, meaning no current can flow through it.
Due to its low power consumption and fast switching capabilities, the MM3Z12VST1G is becoming increasingly popular in today’s designs. It is not only capable of performing in low power applications but also performing reliably in high power applications. It is also able to withstand high voltages, making it ideal for a variety of applications.
In conclusion, the MM3Z12VST1G is a Zener diode that is designed for low power applications such as communications hardware and hobby projects. It is capable of withstanding high voltages and extremely fast switching speeds and can be found in a variety of applications. Its working principle is based on recombination of electron-hole pairs and the generation of heat, which carries dependence to the applied voltage and results in a large amplification once the breakdown voltage is reached. Therefore, the MM3Z12VST1G is a device of choice for various low power applications where fast switching speeds and high efficiency are required.
The specific data is subject to PDF, and the above content is for reference
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MM3Z15VT1G | ON Semicondu... | 0.02 $ | 1000 | DIODE ZENER 15V 300MW SOD... |
MM3Z4V7T1G | ON Semicondu... | -- | 1000 | DIODE ZENER 4.7V 300MW SO... |
MM3Z5V1T1G | ON Semicondu... | -- | 27 | DIODE ZENER 5.1V 300MW SO... |
MM3Z6V2T1G | ON Semicondu... | -- | 1000 | DIODE ZENER 6.2V 300MW SO... |
MM3Z6V8T1G | ON Semicondu... | 0.02 $ | 1000 | DIODE ZENER 6.8V 300MW SO... |
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MM3Z8V2ST1G | ON Semicondu... | -- | 30000 | DIODE ZENER 8.2V 300MW SO... |
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