
Allicdata Part #: | MMBD1504ATR-ND |
Manufacturer Part#: |
MMBD1504A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY GP 200V 200MA SOT23 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 20... |
DataSheet: | ![]() |
Quantity: | 87000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 10nA @ 180V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBD1504A |
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The MMBD1504A device is a silicon-germanium, PN Schottky barrier diode (SBD) array, which is used primarily for the rectification of RF signals in the range of 25 kHz to 6 GHz. SBDs offer low forward voltage drops, low reverse leakage currents, and fast switching times due to the Schottky barrier between the P and N regions of the diode. This makes them ideal for use in power supply and signal switching applications.
Application Fields
The MMBD1504A is suitable for all types of power supply rectification and signal switching applications, including:
- RF signal rectification
- DC-DC converters
- DC-AC inverters
- Voltage regulator circuits
- OP-AMP gain switching
- Logic signal switching
- Signal multiplexing
The device can also be used for phase and gain detectors in frequency-modulated systems, as well as for impedance matching networks and power splits.
Working Principle
The MMBD1504A operates on the principle of rectification, meaning that it has two electrodes, one positive and one negative, arranged in such a way as to allow current to flow in one direction while blocking current in the opposite direction. This is achieved through the use of a diode, also known as a Schottky barrier diode, which forms a barrier between the positive and negative regions of the diode. When exposed to a voltage signal, the diode will allow current to flow in one direction, but will block the flow in the opposite direction. This allows the device to act as a switch, allowing current to flow in one direction while blocking it in the other.
The working principle of the MMBD1504A is essentially the same as other rectifiers, but the principle is enhanced by the use of silicon-germanium materials and techniques. Since this material has a higher breakdown voltage as well as a lower forward voltage drop than regular silicon, the device is able to operate at higher frequencies with less power loss.
In addition, since the MMBD1504A is designed for RF signal rectification, it has a higher bandwidth than a typical diode array. This allows it to handle frequencies upwards of 6 GHz, making it well suited for RF signal rectification applications.
Conclusion
The MMBD1504A is a silicon-germanium, PN Schottky barrier diode (SBD) array, which is used primarily for the rectification of RF signals in the range of 25 kHz to 6 GHz. This device is suitable for all types of power supply rectification and signal switching applications, including RF signal rectification, DC-DC converters, DC-AC inverters, voltage regulator circuits, OP-AMP gain switching, logic signal switching, and signal multiplexing. The working principle of the MMBD1504A is similar to other rectifiers, but the use of silicon-germanium materials and techniques makes it well suited for higher frequency applications, such as RF signal rectification.
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