| Allicdata Part #: | MMBD352LT1OSCT-ND |
| Manufacturer Part#: |
MMBD352LT1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE SWITCH DUAL 7V SOT23 |
| More Detail: | RF Diode Schottky - 1 Pair Series Connection 7V 2... |
| DataSheet: | MMBD352LT1 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Obsolete |
| Diode Type: | Schottky - 1 Pair Series Connection |
| Voltage - Peak Reverse (Max): | 7V |
| Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
| Resistance @ If, F: | -- |
| Power Dissipation (Max): | 225mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBD352 |
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The MMBD352LT1 is a surface mount NPN-type diode typically used in communications that are exposed to radio frequency (RF) power. It is a handy part to have around when the request is for a moderate reverse bias capability and the ability to block a large amount of current.)
The MMBD352LT1 is widely used in RF applications such as transconductance amplifiers, antenna switching, frequency converters, limiters and base station amplifiers. It is available with a range of capacitance values, which enable the device to handle 6.5GHz - 70GHz. It is also designed to handle a reverse bias voltage of up to 7 volts.
The working principle of the MMBD352LT1 is based largely on that of other PN-type diodes. It allows current to pass through it only when the voltage is greater than the forward bias voltage. When the voltage is below this level, the diode blocks the current from passing through it. The MMBD352LT1 is also designed to be fairly resistant to damage from RF power. This is accomplished by its higher breakdown voltage, which helps to prevent contact arcing.
The MMBD352LT1 has many benefits that make it a great choice for radio-frequency applications. The design makes it relatively immune to the effects of RF power. The higher breakdown voltage also helps to prevent arcing, ensuring that the diode remains operational even in high-powered applications. In addition, its small size means that it can be easily integrated into designs that require a large number of components.
MMBD352LT1 diodes have a number of advantages compared to standard PN-type diodes. They’re designed to operate at higher frequencies, helping to ensure reliable operation in RF circuits. They also have a higher breakdown voltage, helping to protect them from the effects of high RF power. Furthermore, the small size of these diodes means that they can be integrated into many types of applications without taking up too much space.
The MMBD352LT1 is an ideal choice for applications that require reliable performance in the presence of high RF power. It provides excellent protection against arcing and can handle frequencies up to 70GHz. The design also ensures reliable operation in a wide range of applications, from base station amplifiers to frequency converters and antenna switching. With its small size and wide range of capacitance values, the MMBD352LT1 is an excellent choice for any radio-frequency application.
The specific data is subject to PDF, and the above content is for reference
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MMBD352LT1 Datasheet/PDF