MMBD4448DW-7-F Allicdata Electronics
Allicdata Part #:

MMBD4448DW-FDITR-ND

Manufacturer Part#:

MMBD4448DW-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY GP 75V 250MA SOT363
More Detail: Diode Array 2 Independent Standard 75V 250mA Surfa...
DataSheet: MMBD4448DW-7-F datasheetMMBD4448DW-7-F Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io) (per Diode): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: MMBD4448DW
Description

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The MMBD4448DW-7-F is a rectifier array semiconductor device manufactured by Central Semiconductor. It can be used in a wide range of applications, and its operating principle is based on the physics of p-n junctions.

Rectifier arrays are semiconductor devices that act as switches allowing current to flow in only one direction. P-n junction diodes are the fundamental building blocks of these rectifier arrays. A P-n junction diode consists of two semiconductor regions connected by a thin junction. One of the regions is called the “p-type” and contains an excess of positively charged “holes”, while the other region is called the “n-type” and contains an excess of negatively charged electrons. When a voltage is applied to a P-n junction, electrons from the n-type region migrate to the p-type region and holes from the p-type migrate toward the n-type region. This forms a depletion region within the junction which acts as an insulator, blocking current from passing through it.

The MMBD4448DW-7-F is a 4-channel rectifier array that is typically used in AC/DC power supply applications. It is capable of carrying up to 1A of forward current while blocking the flow of current in the reverse direction. It features an integrated gate with a guaranteed maximum leakage current of 1µA, allowing it to be used in noise-sensitive applications. Additionally, the MMBD4448DW-7-F features thermal shutdown protection, which will automatically turn off the device in the event of an over-temperature condition.

When the MMBD4448DW-7-F is used in an AC/DC power supply application, the AC power source is connected to the input side of the rectifier array and the DC power output is connected to the output side. When the AC voltage is applied to the input side of the rectifier, the p- and n-type regions of the junction form a depletion layer in the junction which blocks current from flowing. As the AC voltage switches from positive to negative, the P-N junction is reversed, and the depletion layer is eliminated, allowing current to flow from the input side to the output side.

The MMBD4448DW-7-F rectifier array is a versatile device that can be used in a wide range of applications, including motor control, general-purpose power conversion, AC power distribution, and power factor correction. It offers excellent temperature stability and reliability, making it a suitable choice for applications with long-term operation. The MMBD4448DW-7-F rectifier array is an effective and efficient solution for many AC/DC power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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