MMBD354LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | MMBD354LT1GOSTR-ND |
| Manufacturer Part#: |
MMBD354LT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE SWITCH DUAL 7V SOT23 |
| More Detail: | RF Diode Schottky - 1 Pair Common Cathode 7V 225m... |
| DataSheet: |  MMBD354LT1G Datasheet/PDF |
| Quantity: | 9000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky - 1 Pair Common Cathode |
| Voltage - Peak Reverse (Max): | 7V |
| Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
| Resistance @ If, F: | -- |
| Power Dissipation (Max): | 225mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MMBD354 |
Description
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The MMBD354LT1G is an RF diode suitable for most RF and microwave applications. The diode features an internal limiting impedance, which allows it to be used in amplifier circuits and as a mixer in RF and microwave circuits. It also features a fast turn-on and switching time to ensure maximum efficiency. With a wide bandwidth and low loss, it is suitable for a variety of applications such as low noise amplifiers, high-gain amplifiers, power detectors and switches.The MMBD354LT1G is a dual gate Schottky diode that offers high performance in a compact package. It is a low loss, high speed RF diode that is fabricated using a metal-semiconductor junction to reduce the reverse leakage current. The device also features a low gates-to-source capacitance and a high gate-to-drain capacitance, making it ideal for a variety of RF and microwave applications.The MMBD354LT1G can be used as an amplifier, mixer, switch and power detector. It is a high-gain, low-loss amplifier suitable for wideband operation and is capable of handling high power levels. It is also a highly efficient mixer, capable of handling both linear and nonlinear loads. As a switch, the MMBD354LT1G is capable of providing low ON resistance, making it suitable for power switching applications. Finally, the device is a highly accurate power detector that is suitable for precision power control applications.The MMBD354LT1G also has a number of features that enable it to perform in a variety of applications. It is capable of operating at frequencies up to 10 GHz and has a low threshold voltage for fast turn-on and switch speeds. The device also has a high blocking voltage, allowing it to be used in high-voltage applications, and a low leakage current to reduce power consumption.The MMBD354LT1G is designed to be used in applications that require a fast, accurate and reliable response. It is particularly well suited for use in high-speed, high-quality analog and digital circuits. Its wide bandwidth and low insertion loss make it suitable for use in a wide range of RF and microwave applications. Additionally, its high blocking voltage and low reverse leakage current make it suitable for use in power switching and power control applications.In summary, the MMBD354LT1G is a high-performance RF diode suitable for a variety of applications. It is capable of operating at frequencies up to 10 GHz and offers a fast turn-on and switching time. It also has a low threshold voltage, a high blocking voltage and a low leakage current. Additionally, the device has a low insertion loss, making it suitable for use in a wide range of RF and microwave applications, and it is capable of handling both linear and nonlinear loads. Finally, it is an accurate power detector that is suitable for precision power control applications.
The specific data is subject to PDF, and the above content is for reference
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