MMBZ33VALT1G Circuit Protection

Voltage - Clamping (Max) @ Ipp:	46V
Base Part Number:	MMBZ*A
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	40W
Current - Peak Pulse (10/1000µs):	870mA
Series:	--
Voltage - Breakdown (Min):	31.35V
Voltage - Reverse Standoff (Typ):	26V
Bidirectional Channels:	1
Unidirectional Channels:	2
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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TVS - Diodes: The MMBZ33VALT1G Application Field and Working Principle

TVS Diodes are unidirectional semiconductors that have been specifically designed for ESD and transient overvoltage protection. All TVS diodes can be divided into three categories: low capacitance, bi-directional protection, and overvoltage protection. The MMBZ33VALT1G products are diode TVS devices best suited for ESD and other overvoltage protection and are rated for medium power applications.

Application Fields

The MMBZ33VALT1G TVS diode is widely used in many applications such as mobile phones, digital cameras, computers, and other consumer electronics. It is typically used to protect sensitive circuits against ESD pulses, handling extreme environments, and EMC requirements. It is very effective for protection against high-frequency transients in I/O and power interfaces, providing a low-capacitance buffer from the application to the outside world. The protection is achieved by preventing signals passing through to the inputs and outputs.

Working Principle

The MMBZ33VALT1G TVS diode is designed to protect sensitive circuits from extreme overvoltage. It works by quickly and effectively absorbing large surges of energy in the event of an overvoltage and then safely dissipating the energy without causing damage to any components. TVS diodes are designed to be used in parallel with other components and the TVS diode will only conduct when the voltage is above the reverse standoff voltage (VBR) of the device. When the voltage is below the VBR of the device, the diode does not conduct. When the voltage rises above the VBR, the diode will start to conduct and the excess energy is dissipated in the form of heat. This effectively protects the other components since the energy is quickly and safely dissipated.

Conclusion

The MMBZ33VALT1G is a type of TVS diode that is used to protect sensitive circuits from extreme overvoltage. It is a reliable and effective protection device that is used in many consumer electronics such as mobile phones, digital cameras, computers, etc. The MMBZ33VALT1G TVS diode works by quickly and effectively absorbing large surges of energy in the event of an overvoltage and then safely dissipating the energy without causing damage to any components. The diode is designed to be used in parallel with other components and it will only conduct when the voltage is above the reverse standoff voltage (VBR) of the device. This effectively protects the other components since the energy is quickly and safely dissipated.

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