Allicdata Part #: | MMBZ5234BLT3G-ND |
Manufacturer Part#: |
MMBZ5234BLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 6.2V 225MW SOT23-3 |
More Detail: | Zener Diode 6.2V 225mW ±5% Surface Mount SOT-23-3 ... |
DataSheet: | MMBZ5234BLT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 6.2V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 4V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBZ5234B |
Description
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MMBZ5234BLT3G Application Field and Working PrincipleMMBZ5234BLT3G is a single Zener diode in a surface mount plastic package. This Zener diode is designed to protect sensitive circuits against high voltage signals, overvoltage damage and to provide unlimited reverse power dissipation. This diode can operate at temperatures up to 175°C and features a 500 mWatt maximum power dissipation.MMBZ5234BLT3G has several application fields in electronics, such as voltage regulation, overvoltage protection, and reverse polarity protection. This diode is especially useful in voltage regulation applications as it provides excellent temperature stability over a wide operating range. It also has low capacitance and low forward voltage drop that make it suitable for use in high-speed applications. This diode is also used in circuits with low voltage protection, such as microprocessor circuits, which are highly sensitive to voltage variations.To understand the working principle of the MMBZ5234BLT3G, we must first understand the structure of the diode. This diode is composed of lightly doped p-type and n-type semiconductor materials that are connected together. It is this junction of the two materials that creates a barrier that prevents current from flowing in the reverse direction. When there is no voltage applied to the diode, it has a reverse current blocking capability. However, as the voltage increases, the reverse break-down voltage is also increased, and it will become more conductive for current to flow in the forward direction. Once the break-down voltage is reached, the reverse voltage does not significantly affect the current flow and the diode remains in the forward conducting mode.The working principle of the MMBZ5234BLT3G also involves heat. The heat generated by the diode is proportional to the current flowing through it. When the current reaches specified levels, the temperature of the diode may become high enough to damage it or other components in the circuit. This is why MMBZ5234BLT3G has a maximum power dissipation of 500 mWatt.In conclusion, the MMBZ5234BLT3G is a single Zener diode that is designed to protect sensitive circuits against high voltage signals, overvoltage damage and to provide unlimited reverse power dissipation. It has low capacitance and low forward voltage drop that make it suitable for use in high-speed applications. The diode works by creating a barrier between the lightly doped p-type and n-type semiconductor materials that prevents current from flowing in the reverse direction, but allows for the flow of current in the forward direction when a certain viable depending on the reverse breakdown voltage. The heat generated by the diode is proportional to the current, so it is important to make sure the power dissipation of the diode does not exceed the maximum rating to prevent it from being damaged.The specific data is subject to PDF, and the above content is for reference
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