MMBZ5257B-HE3-08 Allicdata Electronics
Allicdata Part #:

MMBZ5257B-HE3-08-ND

Manufacturer Part#:

MMBZ5257B-HE3-08

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 33V 225MW SOT23-3
More Detail: Zener Diode 33V 225mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5257B-HE3-08 datasheetMMBZ5257B-HE3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.01889
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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MMBZ5257B-HE3-08 Application Field and Working Principle

MMBZ5257B-HE3-08 is a single Zener diode developed by Central Semiconductor. This device is available in a hermetically sealed package, making it ideal for general purpose use, such as in industrial, commercial, and military applications. Its features include, but are not limited to, low reverse leakage, low noise generation and low reverse leakage current. This diode is ideal for noise and EMI applications, due to its high-efficiency and highly regulated operation.

Zener diodes are used to regulate voltage in a circuit, meaning they help maintain a certain level of voltage in the circuit. This is achieved via a process called ‘reverse breakdown’, in which the reverse current increases exponentially from a certain voltage. By regulating voltage, Zener diodes can be used for a variety of different applications, including noise suppression, overvoltage protection, and half-wave rectification. They are widely used in a range of devices, from televisions and radios to computers, mobile phones and more.

The working principle behind the MMBZ5257B-HE3-08 and other similar diodes is relatively simple. When a reverse bias is applied to the device, the electric field strength in the junction increases. This, in turn, causes the barrier potential of the junction to decrease. As the barrier potential decreases, the current flowing through the junction will increase exponentially. When the reverse voltage reaches the device’s Zener voltage, the current flowing through the junction increases exponentially. This ensures that any potential overvoltage is regulated during operation.

The MMBZ5257B-HE3-08 is ideal for a range of different applications, including EMI suppression, overvoltage protection, and half-wave rectification. It is available in a hermetically sealed package, making it suitable for both industrial and domestic use. It features low leakages current, low noise generation, and high efficiency. This makes it an ideal choice for devices which need to be able to operate optimally and reliably.

In conclusion, the MMBZ5257B-HE3-08 is a single Zener diode developed by Central Semiconductor, with a hermetically sealed package design ideal for most general purpose applications. Its features, including low reverse leakage, low noise generation and low reverse leakage current, make it an ideal choice for noise and EMI applications. The diode works by regulating voltage via a process called ‘reverse breakdown’, by increasing the current exponentially when the voltage reaches the device’s Zener voltage. It is an ideal choice for users wanting an efficient, reliable and cost-effective solution to their electrical needs.

The specific data is subject to PDF, and the above content is for reference

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