MMSZ39T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	39V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	130 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 27.3V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SOD-123
Supplier Device Package:	SOD-123
Base Part Number:	MMSZ39

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Introduction of MMSZ39T1G

MMSZ39T1G is a Silicon epitaxial planar Zener diode in SOD882 package. It is classified as a single-ended Zener diode with a maximum operating voltage of 200V and a peak reverse voltage of 300V. The typical Zener voltage is 39V. This Zener diode has a maximum reverse current of 500uA and a peak forward current of 300mA. It can be used in applications including overvoltage protection, voltage regulation and input/output surge protection.

MMSZ39T1G Application Field

MMSZ39T1G can be used in different applications, such as overvoltage protection, voltage regulation and input/output surge protection. Overvoltage protection works by protecting a device from voltage spikes (overvoltages) that are higher than its operating voltage. This diode can also be used to regulate voltage for a specific device. MMSZ39T1G can also be used for input/output surge protection against transient voltage surges.

MMSZ39T1G Working Principle

The working principle of MMSZ39T1G Zener diode is based on two opposing actions. The forward voltage action occurs when the voltage applied to the anode is greater than the voltage applied to the cathode. This forward voltage is then conducted to the cathode and then dissipates as heat or through an external load. The reverse voltage action occurs when the voltage applied to the cathode is greater than the voltage applied to the anode. This reverse voltage is then conducted to the anode and then dissipates as heat or through an external load.The combination of the forward voltage action and the reverse voltage action provides a protection from overvoltage. This protection is achieved by the Zener breakdown effect. When the potential difference between the anode and cathode reaches a certain point, the Zener breakdown effect will occur and the Zener diode can regulate the voltage applied to the external circuit, thus providing overvoltage protection.

Conclusion

To sum up, MMSZ39T1G is a Silicon epitaxial planar Zener diode in SOD882 package, with a maximum operating voltage of 200V and a peak reverse voltage of 300V. Its main applications are overvoltage protection, voltage regulation and input/output surge protection. The fundamental principle behind its working relies on two opposing actions—the forward voltage action and the reverse voltage action. It can protect a device from voltage spikes (overvoltages) that are higher than its operating voltage and regulate the voltage applied to the external circuit, thus providing overvoltage protection.

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