Allicdata Part #: | MMSZ5252ET1GOSTR-ND |
Manufacturer Part#: |
MMSZ5252ET1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 24V 500MW SOD123 |
More Detail: | Zener Diode 24V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | MMSZ5252ET1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04123 |
6000 +: | $ 0.03585 |
15000 +: | $ 0.03047 |
30000 +: | $ 0.02868 |
75000 +: | $ 0.02689 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 33 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 18V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | MMSZ5252 |
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The MMSZ5252ET1G is a single zener diode with a typical capacitance of 178pF. It is designed for use in applications such as power management, voltage stabilization, and data protection. The device features a maximum reverse leakage current of 1.0mA at 25°C and a maximum zener voltage of 52V.
The MMSZ5252ET1G is most commonly used in power management and voltage stabilization applications. In power management applications, the diode helps to regulate voltage levels, protecting sensitive components from overvoltage and preventing excessive power dissipation by dissipating unused energy. In voltage stabilization applications, the device helps to maintain a stable DC voltage level, ensuring that the system receives an optimal combination of current and voltage.
The working principle of the MMSZ5252ET1G is based on the characteristic behavior of a zener diode. When a current passes through the device, electrons fill the n-type region, creating a depletion region between the n and p-type regions. When the depletion region reaches its breakdown voltage (Vz), current begins to flow through the diode. As electrical current passes through the diode, the electrons produce a minority carrier inversion layer, which is responsible for the diode’s reverse breakdown voltage.
The MMSZ5252ET1G is ideal for applications requiring a low-cost, reliable, low-power solution. The device offers enhanced linearity, low reverse leakage current, and fast switching speed. The device is offered in a SOT-23 miniature plastic package, making it suitable for space-constrained applications.
In summary, the MMSZ5252ET1G is a single zener diode designed for use in power management, voltage stabilization, and data protection applications. The device features a maximum reverse leakage current of 1.0mA at 25°C and a maximum zener voltage of 52V. The device offers enhanced linearity, low reverse leakage current, and fast switching speed. The device is offered in a SOT-23 miniature plastic package and is suitable for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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