MMSZ4680ET1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	2.2V
Tolerance:	±5%
Power - Max:	500mW
Current - Reverse Leakage @ Vr:	4µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SOD-123
Supplier Device Package:	SOD-123
Base Part Number:	MMSZ4680

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MMSZ4680ET1G Application Field and Working Principle

Diodes - Zener - Single falls in the category of semiconductor devices. The MMSZ4680ET1G belongs to the group of Zener diodes and is specifically a single-diode package. It is made of Silicon, has a maximum reverse voltage rating of 24V, and maximum power dissipation of 500mW.The MMSZ4680ET1G has a variety of applications in the field of circuit protection, voltage regulation, and signal conditioning. In the first instance, it is extensively used to protect sensitive electronic components or circuits from overvoltage transients. The zener diode is placed in reverse bias. Any overvoltage transient attempting to pass through the circuit will be "clipped" before it reaches the sensitive components.In the second application, the MMSZ4680ET1G is used for voltage regulation. By controlling the reverse breakdown voltage, and setting it to a predetermined level, a stable DC voltage is supplied to the circuit, allowing the components to operate within limits. The zener diode here functions like a voltage regulator, with the advantage that it is simpler and cheaper than a mechanical voltage regulator.Finally, the MMSZ4680ET1G is used as a signal conditioning device. This is achieved by connecting the device in series with a signal or pulse and by controlling the reverse breakdown voltage. The diode is able to detect pulses at higher voltages than the limit set by its reverse breakdown voltage, as a result of the avalanche effect in which a large number of electrons are quickly released within the device. The application finds wide use in photodetector circuits and signal amplification.In terms of its working principle, the MMSZ4680ET1G makes use of a phenomenon called the "avalanche effect". As the reverse bias voltage is increased on the diode, it reaches a point where the electric field created can suddenly become strong enough to move electrons from the bulk of the material to the junction. This sudden release of large numbers of electrons causes a steep rise in current, which is what we refer to as "avalanche". Once the reverse breakdown voltage is reached, the zener diode continues to allow current to pass, with a constant level of voltage, until the voltage increases to a level where any further increase in voltage would cause catastrophic failure. This breakdown voltage is relatively constant, and it is this characteristic that makes the zener diode a good voltage regulator.When used as a signal conditioning device, the MMSZ4680ET1G functions similarly. It detects input pulses that are higher than the breakdown voltage of the diode, and amplifies them. This is done by connecting a second diode in parallel with the MMSZ4680ET1G and using a DC power supply as a reference. Any input pulse that is higher than the break-down voltage of the zener diode will cause a sudden release of electrons, which will then be detected by the diode in parallel, allowing current to flow through the circuit. The MMSZ4680ET1G is an essential component in the field of circuit protection, voltage regulation and signal conditioning. It is a device that allows current to flow through a circuit at a constant voltage level and is also a great choice when it comes to biasing and signal amplifying applications. Thanks to its reverse breakdown voltage and avalanche effect, the MMSZ4680ET1G has a wide range of applications and can be used as an economical and effective solution to circuit protection and voltage regulation.

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