MMSZ5225B-HE3-08 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	3V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	30 Ohms
Current - Reverse Leakage @ Vr:	50µA @ 1V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SOD-123
Supplier Device Package:	SOD-123

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MMSZ5225B-HE3-08, Diodes - Zener - Single

The MMSZ5225B-HE3-08 is a single Zener diode product from ON Semiconductor. These devices are designed for use in general-purpose applications such as voltage limiting, voltage regulation, and reverse current protection. It provides reliable, cost-effective performance and a low forward voltage drop.

Overview

The MMSZ5225B-HE3-08 is a single Zener diode product. It has ESD up to 8kV and a low leakage current. The breakdown voltage is 5.2V and the power dissipation is 250mW. The device is rated at 25mA with a maximum reverse voltage of 5.2V. It has a low forward voltage drop of 0.7V and an operating junction temperature of -55 to +150C. The device has a lead-free package and is available in 2” tape and reel packaging.

Applications

The MMSZ5225B-HE3-08 can be used in a wide range of applications. It is suitable for use in voltage limiting, voltage regulation, reverse current protection, and polarity protection circuits. It can also be used in electric vehicle and hybrid vehicle DC-DC converters, telecom systems, automotive applications, and motor control applications.

Working Principle

When current flows through a Zener diode, it produces a voltage drop across the diode that is equal to the Zener breakdown voltage. This breakdown voltage is determined by the doping levels and bandgap energy of the semiconductor material. When a higher voltage is applied to the anode of the diode, the electrons in the n-type material are pushed into the p-type material. As these electrons move, they become majority carriers in the p-type material. This creates localized electric fields which cause the voltage across the Zener diode to remain constant, no matter what the applied voltage is. This phenomenon is known as the Zener breakdown effect.The MMSZ5225B-HE3-08 also offers temperature compensation. This allows it to maintain a constant breakdown voltage over a wide range of temperatures. This ensures consistent performance and reliable operation over a range of temperatures.

Conclusion

The MMSZ5225B-HE3-08 from ON Semiconductor is a single Zener diode product designed for general-purpose applications. It offers a low leakage current and a low forward voltage drop. It has a breakdown voltage of 5.2V and is rated at 25mA with a maximum reverse voltage of 5.2V. This device has a wide range of applications, such as voltage limiting, voltage regulation, reverse current protection, and polarity protection. It works on the principle of Zener breakdown effect, which allows it to maintain a constant breakdown voltage regardless of the applied voltage. It also offers temperature compensation, ensuring consistent performance and reliable operation over a range of temperatures.

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