MMSZ5235C-E3-08

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The MMSZ5235C-E3-08 is a single zener diode which is a semiconductor device with a marked breakdown voltage and low reverse leakage current. These diodes are available in a variety of different sizes and power ratings. The MMSZ5235C-E3-08 is a high-power MELF diode designed for ECU and DC motors applications. It offers a wide operating temperature range for reliable operation and very low forward voltage drop.

The MMSZ5235C-E3-08 has an intense reverse breakdown voltage of 5.2V and 0.2mA reverse current leakage. It features a low 3.1V of forward voltage drop and low profile, making it ideal for use in confined spaces such as ECUs and embedded systems where reliability and size are critical factors. The diode also has a high temperature coefficient of -2.5mV/°C, which ensures that the operating temperature is kept within the specified range.

The MMSZ5235C-E3-08 is a general-purpose zener diode which offers an ideal solution for applications requiring a high level of stability and reliability. It is mainly used in automotive, mobile communications, and consumer electronics applications. The device can be used in reverse bias applications such as overvoltage protection circuits and in forward bias applications such as voltage regulation and waveform clamping. As well as protecting sensitive components from harmful voltage fluctuations, the diode can also be used to generate stable and reliable output voltages.

The MMSZ5235C-E3-08 works on the principle of Zener breakdown. When a reverse voltage is applied to the diode, the voltage across the diode increases until it reaches the Zener breakdown voltage. At this point, current begins to flow through the diode, causing it to regulate the output voltage. The diode will then remain in breakdown even if the voltage is increased beyond the breakdown voltage, resulting in a stable and reliable output voltage.

The MMSZ5235C-E3-08 provides a reliable and cost-efficient solution for a variety of different applications. It is easy to use, can be used in compact designs, and offers effective electrical protection with quick response times. With its high temperature coefficient and low forward voltage drop, the diode can be used in a wide range of applications where reliability and performance is key.

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