MMSZ5261B-E3-08

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The MMSZ5261B-E3-08 Diode is a silicon epitaxial planar Zener diode with a nominal Zener Voltage at 4.3V. It is categorized as a single in the diodes of Zener type and is a widely used voltage reference device featured with very low zener impedance, steady zener voltage and easy to acquire, making it suitable for various application fields. It has a wide range of other features and is used popularly both in analog circuit designs and digital circuit designs.

Overview

MMSZ5261B-E3-08 has various characteristics that make it suitable for many applications. It has a maximum reverse voltage of 5.6V, maximum repetitive peak reverse voltage of 7V, maximum power dissipation of 500 mW, storage temperature of -65℃ to 175℃, thermal resistance of 2.4℃/W. It has an operating temperature range of -55℃ to +125℃, forward voltage drop of 1.1V and a very low Zener impedance.

Usage

MMSZ5261B-E3-08 device is widely used as a voltage reference in various applications. It is used in devices like circuit tester, infrared acquisition card, data acquisition card, radio communication devices, e-meters, logic ICs, voltage regulators, voltage stabilizers, audio equipment, hand-held ICs, television ICs, integrated circuits, digital devices, computer peripherals, microcontrollers, medical equipment, computer chips, transistors, etc. It can also be used in voltage regulation and surge protection circuits. It is often used as a voltage regulator module, a voltage regulator circuit, a current source, a rectifier, a driver, and a temperature sensor.

Working Principle

MMSZ5261B-E3-08 is a type of Zenner diode, which is used for converting alternating current (AC) to direct current (DC). It works based on the Zener breakdown phenomenon in a reverse-biased PN junction. When reverse biased, the built-in electric field within the PN junction increases. As this potential increases, free electrons in the n-type material become more active and begin to flow across and recombine with holes in the p-type material. As this process continues, the Zener diode can become a voltage-controlled switch.

When connected to an electrical circuit, the Zener diode will resist the current until the reverse-bias voltage reaches the Zener voltage of the diode. At this point, the resistance is suddenly reduced and the current will flow through the diode. This allows current to pass through, when Va is less than Vz and blocks the current, when Va is greater than Vz, where Vz is the Zener voltage and Va is the applied voltage.

Conclusion

In conclusion, MMSZ5261B-E3-08 is a silicon epitaxial planar Zener diode that is dependable and is used in various applications. Its features like very low zener impedance, steady zener voltage,reverse voltage of 5.6V, maximum power dissipation of 500 mW, and a wide operating temperature range make it suitable for various applications. The MMSZ5261B-E3-08 Diode works based on the Zener breakdown phenomenon in a reverse-biased PN junction and acts as a voltage-controlled switch.

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