Allicdata Part #: | MMSZ5240BRHG-ND |
Manufacturer Part#: |
MMSZ5240B RHG |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 10V 500MW SOD123F |
More Detail: | Zener Diode 10V 500mW ±5% Surface Mount SOD-123F |
DataSheet: | MMSZ5240B RHG Datasheet/PDF |
Quantity: | 1000 |
36000 +: | $ 0.01667 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 3µA @ 8V |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123F |
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MMSZ5240B RHG Application Field and Working Principle
The MMSZ5240B RHG is a single Zener diode commonly used in many applications, including various electronics and embedded systems. Its key features include high breakdown voltage of 5.3V, its low reverse current of 1.25mA at 5.3V, and its good temperature stability.
This diode can be used as a rectifier, a Zener for voltage regulation, or a reference for voltage measurement. It is also used for buffering current to protect other components in a circuit. Additionally, it can be used in a voltage step-up circuit, providing clean and efficient energy conversion.
The MMSZ5240B RHG consists of layers of various materials. Its n-type material consists of highly doped polysilicon. The n-doped polysilicon layer has an anode-to-cathode distance of 2µm. Its p-type material consists of a boron-doped polysilicon layer. The material on the sides is composed of a 0.5µm thick SiO2 layer to isolate thediode from the other components.
The operation of the MMSZ5240B RHG is based on thermodynamics. When the anode is positively biased and the voltage increases to the breakdown voltage, electrons in the n-type layer begin to tunnel through the reverse biased pn junction. This in turn creates a small current, which produces heat in the n-type layer.
At the point of breakdown, the temperature in the n-type layer rises drastically and creates a conductive path. This allows a relatively large current to flow, establishing a stable junction. This breakdown is known as "Zener breakdown" and can be used to create a stable and low-noise voltage output.
The MMSZ5240B RHG can be used in a wide range of applications. It can be used in power supplies for regulating the output voltage, in switching regulators and motor control for voltage protection, in digital systems for clock synchronization, and in optical and automotive systems for current control. It is also used in AC/DC converters, in frequency dividers, and in pulse generators.
In short, the MMSZ5240B RHG is a single Zener diode that can be used for a variety of applications in electronics and embedded systems. It has a breakdown voltage of 5.3V, low reverse current of 1.25mA at 5.3V, and good temperature stability. Its operation is based on thermodynamics and it can be used to create a stable, low-noise voltage output.
The specific data is subject to PDF, and the above content is for reference
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