Allicdata Part #: | MMSZ5250B-G3-18-ND |
Manufacturer Part#: |
MMSZ5250B-G3-18 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 20V 500MW SOD123 |
More Detail: | Zener Diode 20V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | MMSZ5250B-G3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02553 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 15V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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MMSZ5250B-G3-18 is a single Zener diode, with features including low leakage, low profile, and low thermal resistance. It is designed for high-speed switching operations, providing excellent control at all times. The diode is designed to be used in high-frequency radio frequency (RF) applications. It is capable of switching in frequencies up to 1GHz.
The main application field of the MMSZ5250B-G3-18 is in the high-speed switching operations, as it provides the best performance in such applications. It is mainly used in devices that involve switching circuits, such as pulsed circuit clamping, overvoltage protection and voltage stabilization. This diode is also used in audio and video equipment, where it is used to control the pulse width of the signal.
The main working principle of the MMSZ5250B-G3-18 is based on the PN junction and its diode characteristics. This diode exhibits a low forward and reverse voltage at the same current. The voltage drop across the junction depends on the materials and structure of the diode. The voltage is usually greater in the reverse direction than in the forward direction. When the reverse bias voltage is greater than the breakdown voltage of the diode, it conductscurrent in both directions and the Zener breakdown voltage is reached.
The MMSZ5250B-G3-18 diode also exhibits a low-power forward voltage, which allows it to be used in high-speed switching applications without significant losses. It also has high voltage breakdown and low leakage, which results in excellent performance in such applications. The diode is also moisture and temperature resistant, providing excellent long-term reliability.
In conclusion, the MMSZ5250B-G3-18 is an excellent single Zener diode for high-frequency applications, allowing devices to effectively switch at frequencies up to 1GHz. Its low forward and reverse voltage, high voltage breakdown and low leakage make it perfect for such uses. Furthermore, its low profile, low thermal resistance and excellent temperature and moisture resistance ensure long-term reliability in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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