Allicdata Part #: | MMSZ5250B-TPMSTR-ND |
Manufacturer Part#: |
MMSZ5250B-TP |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 20V 500MW SOD123 |
More Detail: | Zener Diode 20V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | MMSZ5250B-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02282 |
6000 +: | $ 0.01985 |
15000 +: | $ 0.01687 |
30000 +: | $ 0.01588 |
75000 +: | $ 0.01489 |
150000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 20V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 15V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | MMSZ5250B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMSZ5250B-TP is a single zener diode which is an important component in the integrated circuit with many applications in various fields. It is a PN junction diode with an anode and a cathode, and the majority carrier electrons travel from the anode to the cathode. In circuit applications, the diode is designed to allow electrons to move in one direction only, in a similar way to a check valve. It also features a breakdown voltage of 5.2 volts and a power dissipation (maximum junction temperature) of 350 mW.
This diode is primarily used to regulate and stabilize electrical current flow. It can be used in both DC and AC currents, and its breakdown voltage makes it a good choice for applications which require specific voltage levels. In DC applications, the diode is used to maintain a certain voltage level when the current flowing through the device changes. The MMSZ5250B-TP is also commonly used in AC applications as a voltage limiter, protecting other components from voltage spikes. It can also be used as a voltage regulator, preventing excessive voltage from damaging sensitive components.
The working principle of the MMSZ5250B-TP diode can be explained by considering its PN junction structure. The PN junction consists of two types of semiconductor material that are joined together in a single specimen. The semiconductor materials are composed of negative electrons, holes and positive ions. When a voltage is applied to the PN junction, a potential barrier is created. The potential barrier consists of a depletion region that is formed due to the repulsion between negative electrons and positive ions. As the potential barrier increases, the current flow through the diode decreases, until finally it reaches a breakdown voltage where the diode becomes conductive and current starts to flow again.
The MMSZ5250B-TP diode is a versatile component, with many applications in the fields of consumer electronics, automobiles and industrial control systems. It can be used to protect other components from voltage spikes, to regulate and stabilize current flow, and to maintain a certain voltage level when the current through the device changes. It has a breakdown voltage of 5.2 volts and a power dissipation rating of 350 mW. The diode is easy to use and can be integrated into existing circuit designs without much difficulty.
The specific data is subject to PDF, and the above content is for reference
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