MMSZ5252B-E3-08 Discrete Semiconductor Products

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The MMSZ5252B-E3-08 is a single Zener diode designed for use in applications like voltage regulation, lightning protection and temperature compensation. This diode is able to provide constant voltage regulation by absorbing the excess current. It is also able to protect circuits from overvoltage damage.

The MMSZ5252B-E3-08 has a voltage breakdown of 4.7V with a power of 200mW. The diode is hermetically sealed in a small SOT-23 package. This package allows for easy, reliable soldering onto circuit boards and offers an optimal power-to-space ratio.

The MMSZ5252B-E3-08 works on the principle of Zener breakdown. Zener breakdown occurs when the voltage across a p-n junction reaches a certain level. Generally, the reverse breakdown voltage of such diodes can be manipulated by changing the doping level or width of the depletion layer. When higher reverse voltages are applied across a Zener diode, electrons in the p-region are sent towards the n- region. This creates an avalanche of electrons in the n-region which rapidly increases current flow under the applied reverse bias.

The MMSZ5252B-E3-08 has a wide range of applications. It can be used to regulate the output voltage of power supplies, protect circuits from overvoltage damage, provide temperature compensation and provide voltage references. It can also be used to build voltage dividers, voltage multipliers and voltage regulators.

In conclusion, the MMSZ5252B-E3-08 is a single Zener diode designed for use in applications like voltage regulation, lightning protection and temperature compensation. It provides constant voltage regulation by absorbing the excess current and also provides protection from overvoltage damage. It has a wide range of applications including regulating the output voltage of power supplies, providing voltage references and building voltage dividers, voltage multipliers and voltage regulators.

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