MMSZ5257B-TP Allicdata Electronics
Allicdata Part #:

MMSZ5257B-TPMSTR-ND

Manufacturer Part#:

MMSZ5257B-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 33V 500MW SOD123
More Detail: Zener Diode 33V 500mW ±5% Surface Mount SOD-123
DataSheet: MMSZ5257B-TP datasheetMMSZ5257B-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: MMSZ5257B
Description

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Diodes are semiconductor devices which are designed to allow electricity to flow in one direction. The MMSZ5257B-TP is an example of a single zener diode, a diode specifically designed to permit small reverse currents and act as a regulator. This article will discuss the application field and working principle of the MMSZ5257B-TP, covering its features, design considerations and limitations.

The MMSZ5257B-TP is designed to be used in low voltage, high power applications such as power supplies, audio circuits and other electronic components. It is a high efficiency device, capable of dissipating 180mW of power. This makes it suitable for applications where power dissipation needs to be minimized due to limited space or operating environment. The MMSZ5257B-TP is available in a variety of sizes and voltage ratings, with the smallest being a SOD-123 package size and voltage rating of 3.3V.

The MMSZ5257B-TP works by allowing a small reverse current to flow, while preventing larger current flows from passing in the opposite direction. This serves to regulate the voltage between the two terminals, ensuring a stable, low-noise power source. The device is designed to protect against catastrophic failure from voltage excursions as well as minimize power losses due to its high efficiencies.

The MMSZ5257B-TP has two important design considerations. The first is the choice of substrate, which should be chosen based on the operating environment. The device may be made from either silicon, gallium arsenide or other material, depending on the intended application. The second important consideration is the selection of the proper level of reverse bias current. This should be set to a level which is suitable to the intended application and voltage rating of the device.

The MMSZ5257B-TP also has a few limitations. It is suitable for operation in environments up to 85°C, and should not be used in applications which require a higher temperature rating. It can only be used in a single direction, and will not work in reverse biased applications. The voltage rating is limited to a maximum of 3.3V, and may not be suitable for some higher voltage applications. The device also features ESD protection, making it well-suited for handheld or portable devices.

In conclusion, the MMSZ5257B-TP is a single zener diode which is suitable for low voltage, high power applications. It is designed to allow a small reverse current to pass, while blocking higher currents from flowing in the opposite direction. The device has several design considerations, such as substrate selection and selection of the appropriate reverse bias current, as well as some limitations including a maximum temperature rating and voltage rating.

The specific data is subject to PDF, and the above content is for reference

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