MMSZ5257ET1G Allicdata Electronics
Allicdata Part #:

MMSZ5257ET1GOSTR-ND

Manufacturer Part#:

MMSZ5257ET1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 33V 500MW SOD123
More Detail: Zener Diode 33V 500mW ±5% Surface Mount SOD-123
DataSheet: MMSZ5257ET1G datasheetMMSZ5257ET1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04123
6000 +: $ 0.03585
15000 +: $ 0.03047
30000 +: $ 0.02868
75000 +: $ 0.02689
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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Diodes – Zener – Single

The MMSZ5257ET1G is a single zener diode, a type of diode that has features enabling it to regulate the voltage of a circuit. It is a component used to direct the current in only one direction. This makes it a very important component of circuits. Their non-linear electrical characteristics are very useful for voltage regulation and help stabilize the voltage of a circuit which prevents damage to sensitive components.

The MMSZ5257ET1G diode is a low power component and has an maximum average power rating of 350mW. It has an operating temperature range from -65°C to 175°C and is made from small signal surface mount component with an optimized effiiciency processing. It also has an axial lead plated through hole/ SMD package, a maximum reverse current of 5.0uA, and a voltage temperature coefficient of +/- 0.12%/K. It is a very versatile component with a fast response times and is able to withstand high temperatures.

The MMSZ5257ET1G zener diode has various applications which include power management, regulating power supply, or clamping overvoltage and waveshape correction, frequency stabilization, as well as data signal application buffers. It also used to protect against transients and source-sink inductive transients. It is also used in analog and digital signal applications, as well as being a component in the analogue switch-mode power supplies.

The MMSZ5257ET1G diode works by the operation of the P-N junction layer. When operating in the reverse-biased mode, it allows for the controllable flow of the drift current. The voltage that passes in this biasing process depends on the junction\'s characteristics, as well as on the current flowing through it. The series resistance of the junction limits the current. This is known as the breakdown voltage and is used to control the circuit voltage.

The MMSZ5257ET1G diode is a great tool to enhance and stabilize the performance of electrical and electronic circuits. Its fast response times and various applications make it the best choice for a variety of different electronic components. Its features make it the most versatile component in the world of diodes.

The specific data is subject to PDF, and the above content is for reference

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