Allicdata Part #: | MMSZ5257ET1GOSTR-ND |
Manufacturer Part#: |
MMSZ5257ET1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 33V 500MW SOD123 |
More Detail: | Zener Diode 33V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | MMSZ5257ET1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04123 |
6000 +: | $ 0.03585 |
15000 +: | $ 0.03047 |
30000 +: | $ 0.02868 |
75000 +: | $ 0.02689 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 58 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMSZ5257ET1G is a single zener diode, a type of diode that has features enabling it to regulate the voltage of a circuit. It is a component used to direct the current in only one direction. This makes it a very important component of circuits. Their non-linear electrical characteristics are very useful for voltage regulation and help stabilize the voltage of a circuit which prevents damage to sensitive components.
The MMSZ5257ET1G diode is a low power component and has an maximum average power rating of 350mW. It has an operating temperature range from -65°C to 175°C and is made from small signal surface mount component with an optimized effiiciency processing. It also has an axial lead plated through hole/ SMD package, a maximum reverse current of 5.0uA, and a voltage temperature coefficient of +/- 0.12%/K. It is a very versatile component with a fast response times and is able to withstand high temperatures.
The MMSZ5257ET1G zener diode has various applications which include power management, regulating power supply, or clamping overvoltage and waveshape correction, frequency stabilization, as well as data signal application buffers. It also used to protect against transients and source-sink inductive transients. It is also used in analog and digital signal applications, as well as being a component in the analogue switch-mode power supplies.
The MMSZ5257ET1G diode works by the operation of the P-N junction layer. When operating in the reverse-biased mode, it allows for the controllable flow of the drift current. The voltage that passes in this biasing process depends on the junction\'s characteristics, as well as on the current flowing through it. The series resistance of the junction limits the current. This is known as the breakdown voltage and is used to control the circuit voltage.
The MMSZ5257ET1G diode is a great tool to enhance and stabilize the performance of electrical and electronic circuits. Its fast response times and various applications make it the best choice for a variety of different electronic components. Its features make it the most versatile component in the world of diodes.
The specific data is subject to PDF, and the above content is for reference
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