MMSZ5262B-G3-18 Allicdata Electronics
Allicdata Part #:

MMSZ5262B-G3-18-ND

Manufacturer Part#:

MMSZ5262B-G3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 51V 500MW SOD123
More Detail: Zener Diode 51V 500mW ±5% Surface Mount SOD-123
DataSheet: MMSZ5262B-G3-18 datasheetMMSZ5262B-G3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02553
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 39V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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The MMSZ5262B-G3-18 is a Zener diode from Diodes Inc. It is single in construction and features an 18-volt reverse breakdown voltage rating for stable and reliable operation. The device is made using an advanced barrier structure technology with a glass shrouded construction and a virtually indestructible epoxy aluminized mounting stud.

The MMSZ5262B-G3-18 offers a low on-resistance and low capacitance, making it ideal for applications in consumer electronics, automotive, and communications contexts. This device is ideal for use in applications such as voltage regulation, voltage references, and voltage level separation, as well as flyback converters, voltage multiplier circuits, and reverse-polarity protection.

The working principle behind the MMSZ5262B-G3-18 is based on the basic zener diode design. A zener diode is a semiconductor device that consists of two regions of opposite polarity, the anode and cathode, which are separated by a thin barrier layer. When a forward voltage is applied to the diode, current can flow through the diode and thus across the barrier layer; however, when the applied voltage exceeds a certain breakdown voltage, current will flow based on the zener breakdown mechanism, resulting in a zener diode avalanche situation.

The normal region of the diode is known as the low-voltage state because this region continues to exist while the applied voltage is less than the breakdown voltage. When the applied voltage increases beyond the breakdown voltage, the diode conducts in the high-voltage state and current will flow through both polarities, resulting in a stable output voltage.

Voltages produced by the MMSZ5262B-G3-18 depend on the breakdown voltage and the power dissipation. When the current remains below the maximum rating, the zener voltage can remain stable over a wide temperature range, the effects of changes in power dissipated, and even long-term aging. Additionally, this device is designed to be rugged and exhibits excellent power and temperature stability over a wide range of applications.

The MMSZ5262B-G3-18 is an ideal choice for designers looking to benefit from outstanding protection and reliable voltage regulation. It is an excellent choice for many electronic and automotive applications, where voltage regulation and stability are essential. Additionally, it is designed to be rugged to maintain specified performance and reliability over a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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