MMXZ5257B-TP Allicdata Electronics
Allicdata Part #:

MMXZ5257B-TP-ND

Manufacturer Part#:

MMXZ5257B-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 33V 200MW SOD323
More Detail: Zener Diode 33V 200mW ±5% Surface Mount SOD-323
DataSheet: MMXZ5257B-TP datasheetMMXZ5257B-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03043
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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Diodes - Zener - Single consist of two semiconductors, an anode and a cathode, connected by a junction where electrons can cross over to form an electrical current. The MMXZ5257B-TP, in particular, is a type of breakdown diode with a specified breakdown voltage rating. It is designed to protect against overvoltage in electronic circuits and overcurrent through an inductor. This particular diode has a maximum reverse power dissipation of 500 mW, a breakdown voltage of 5.3 V, and an operating temperature of -65 to 150 °C.

The most important application of the MMXZ5257B-TP is overvoltage protection, which can preserver connected devices from high voltages. Once the reverse voltage exceeds its breakdown voltage, the diode will quickly begin to conduct and short out the overvoltage. It can also serve as a voltage reference, auto-disconnect in overcurrent events, and create a rectifier circuit.

The principle behind the MMXZ5257B-TP works by allow electrons to pass from the voltage-raising anode to the voltage-reducing cathode. When the voltage on either side of the diode exceeds its breakdown voltage, the diode will begin to conduct, thereby protecting against overvoltage. Operating at temperatures of -65 to 150 °C, the diode will react quickly and efficiently in the event of an overvoltage.

The structure of the MMXZ5257B-TP is designed to be a compact, surface-mountable component. It comes in a robust, hermetically-sealed package that is designed to provide reliable performance and maximum heat dissipation. It also features a low forward voltage drop, as well as a low series inductance.

At its most basic, the MMXZ5257B-TP is an essential component for many different applications, especially ones that require overvoltage protection. Its robust construction and low series inductance make it the ideal component for these types of applications. Its compact design allows it to fit in applications where space is an issue, while its hermetic package ensures reliable performance and maximum heat dissipation.

The specific data is subject to PDF, and the above content is for reference

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