MMXZ5258B-TP Allicdata Electronics

MMXZ5258B-TP Discrete Semiconductor Products

Allicdata Part #:

MMXZ5258B-TPMSTR-ND

Manufacturer Part#:

MMXZ5258B-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 36V 200MW SOD323
More Detail: Zener Diode 36V 200mW ±5% Surface Mount SOD-323
DataSheet: MMXZ5258B-TP datasheetMMXZ5258B-TP Datasheet/PDF
Quantity: 3000
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 27V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: MMXZ5258B
Description

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Diodes - Zener - Single: MMXZ5258B-TP Application Field and Working Principle

MMXZ5258B-TP is an innovative single Zener diode component developed by  MAXIM Integrated circuit. It has some innovations that make it different from the previous diodes. The salient feature of MMXZ5258B-TP are its low breakdown voltage, temperature coefficient and low inductance. 

MMXZ5258B-TP Application field

MMXZ5258B-TP is mainly applied in various consumer electronics such as laptops, tablet PCs and mobile phones. It is mainly used as a protection component which is capable of withstanding a high amount of current. It has a fast switching performance which enables it to be used in a wide range of current control and voltage regulation systems. 

Working Principle of MMXZ5258B-TP

The working principle of MMXZ5258B-TP is based on the Zener effect. When a reverse voltage is applied to the Zener diode, a constant voltage is maintained due to the Zener breakdown. The Zener breakdown causes the electrons to become more energetic and thus more freely pass through the junction. The maximum voltage that can be generated by a MMXZ5258B-TP diode is limited by its breakdown voltage. The breakdown voltage is largely determined by the doping concentration, which is the amount of impurity added to the diode material. The breakdown voltage is maintainable for the fixed forward bias current. The amount of current flowing through the diode is dependent of the current through the impedance. The breakdown voltage and current can be controlled by a Zener diode resistor and a voltage reference circuit. The low temperature coefficient of MMXZ5258B-TP, also known as its thermal coefficient, allows to reduce the variation of the breakdown voltage with temperature. This makes it possible for the diode to remain stable even when the temperature changes. The low inductance is also beneficial as it can reduce the production of Electrical noise.

Conclusion

MMXZ5258B-TP is an advanced single Zener diode with some innovative features. It is used in various digital applications like laptops, Mobile phones and other consumer electronics. The working principle is based on the Zener effect and the maximum voltage is determined by its breakdown voltage. MMXZ5258B-TP also has a low temperature coefficient and a low inductance which makes it more robust and reliable. 

The specific data is subject to PDF, and the above content is for reference

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