MMXZ5258B-TP Discrete Semiconductor Products |
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Allicdata Part #: | MMXZ5258B-TPMSTR-ND |
Manufacturer Part#: |
MMXZ5258B-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 36V 200MW SOD323 |
More Detail: | Zener Diode 36V 200mW ±5% Surface Mount SOD-323 |
DataSheet: | MMXZ5258B-TP Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 36V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 70 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 27V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | MMXZ5258B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Zener - Single: MMXZ5258B-TP Application Field and Working Principle
MMXZ5258B-TP is an innovative single Zener diode component developed by MAXIM Integrated circuit. It has some innovations that make it different from the previous diodes. The salient feature of MMXZ5258B-TP are its low breakdown voltage, temperature coefficient and low inductance.
MMXZ5258B-TP Application field
MMXZ5258B-TP is mainly applied in various consumer electronics such as laptops, tablet PCs and mobile phones. It is mainly used as a protection component which is capable of withstanding a high amount of current. It has a fast switching performance which enables it to be used in a wide range of current control and voltage regulation systems.
Working Principle of MMXZ5258B-TP
The working principle of MMXZ5258B-TP is based on the Zener effect. When a reverse voltage is applied to the Zener diode, a constant voltage is maintained due to the Zener breakdown. The Zener breakdown causes the electrons to become more energetic and thus more freely pass through the junction. The maximum voltage that can be generated by a MMXZ5258B-TP diode is limited by its breakdown voltage. The breakdown voltage is largely determined by the doping concentration, which is the amount of impurity added to the diode material. The breakdown voltage is maintainable for the fixed forward bias current. The amount of current flowing through the diode is dependent of the current through the impedance. The breakdown voltage and current can be controlled by a Zener diode resistor and a voltage reference circuit. The low temperature coefficient of MMXZ5258B-TP, also known as its thermal coefficient, allows to reduce the variation of the breakdown voltage with temperature. This makes it possible for the diode to remain stable even when the temperature changes. The low inductance is also beneficial as it can reduce the production of Electrical noise.
Conclusion
MMXZ5258B-TP is an advanced single Zener diode with some innovative features. It is used in various digital applications like laptops, Mobile phones and other consumer electronics. The working principle is based on the Zener effect and the maximum voltage is determined by its breakdown voltage. MMXZ5258B-TP also has a low temperature coefficient and a low inductance which makes it more robust and reliable.
The specific data is subject to PDF, and the above content is for reference
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