MP6KE10AE3 Allicdata Electronics
Allicdata Part #:

1086-7011-ND

Manufacturer Part#:

MP6KE10AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8.55V 14.5V T-18
More Detail: N/A
DataSheet: MP6KE10AE3 datasheetMP6KE10AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 14.5V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 41A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 8.55V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient voltage suppression diodes (TVS) are semiconductor devices that provide protection against overvoltage and overcurrent surges. The MP6KE10AE3 is the latest generation of high-voltage, high-performance, unidirectional and bidirectional TVS diodes. It has a maximum peak pulse power of 6.0kW, peak working voltage up to 10A, and has an impressive working temperature range of -55 to +150℃, making it suitable for many industrial and automotive applications.

Nowadays, MP6KE10AE3 has been widely applied in electronic communication units, such as Ethernet switches, media switches, and routers, to protect your communication systems from power surges, electrostatic discharges, and other transients. Seen in automotive application, it’s suitable for systems of automotive electronic control systems and power control systems by providing protection against overvoltage and overcurrent surges. It also helps to provide protection for other electrical and electronic components in vehicles, such as LEDs, radar systems, instrument clusters, and many other system components.

The working principle of MP6KE10AE3 are mainly based on avalanche breakdown and symmetrical Zener breakdown. In the face of ESD and other surge voltage, the MP6KE10AE3 using reverse-biased Zener collisions to sustain a low level breakdown voltage and have an impressive amount of energy capability.

In avalanche breakdown, when the reverse voltage applied to the p-n junction increases to a certain value, it causes the minority carriers to accumulate at the p-n junction, the current rises sharply, and the avalanche breakdown occurs. While symmetrical Zener breakdown is mainly based on the effect of the reverse bias on the internal fields of the p-n junction, thus forming a strong electrical field at the interface of the P and n regions, n-type impurities are then displaced from the n-region due to the electrical field effects, causing breakdown.

The MP6KE10AE3 offers a wide range of features to meet your design requirements, for instance, it has a fast response time (ranging from 150ns to 200ns), good ESD protection (2kV), high peak pulse power of 6.0kW, and peak working voltage up to 10A. Furthermore, with an impressive temperature stability range, it fits perfectly into industrial and automotive applications.

In conclusion, the MP6KE10AE3 provides fast, effective, and reliable overvoltage and overcurrent protection in communication systems, automotive systems, and other industrial applications. With its impressive peak pulse power, impressive temperature range, fast response time and ESD protect features, it’s the perfect solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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