MP6K11TCR

MP6K11TCR is a 6-channel lateral double-diffused MOSFET (LDMOS) array with a high-power gain and excellent linearity performance. It has been created to enable the latest generation of power amplifiers for a wide range of applications. The device is manufactured in a compact package, which includes three independent LDMOS transistors in parallel for each of the 6 channels, for a total of 18 transistors and a space-saving size.

Application Field

MP6K11TCR is an ideal solution for a variety of applications in the consumer, industrial and automotive markets. It can be used for medium-power amplifiers in portable devices, such as smartphones, tablets and laptops. It is also suitable for the design of high-performance audio amplifiers. Additionally, it is suitable for medical devices, multi-channel instrumentation and industrial systems.

Moreover, it can be used to power applications in the power-line industry, such as high-efficiency RF and microwave PA’s, smart meters, home automation solutions and other related telecom applications. In the automotive field, it is suitable for mirror adjustment, parking assistance and electrically powered side windows.

Working Principle

MP6K11TCR combines a high-power MOSFET array with a single gate driver transistor to provide an efficient and linear performance. The main feature of the device is its optimized gate drive that enables the longer drain-source avalanche-capable operation of each of the six power transistors. This helps to reduce power losses and improves the efficiency of each of the transistors.

The gate drive circuit is designed for low charge injection, providing lower gate current switching losses, lower power consumption and higher reliability. Additionally, the gate resistance (Rg) is able to minimize the peak gate charge (Qg) of the total devices, which helps to reduce the gate switching noise and improves linearity. The thermal performance is improved through the optimized transistor structure, in which the three devices share a single heat-sink.

MP6K11TCR is designed using LDMOS process technology, which makes the switching speed compatible with high-frequency operations up to at least 2 GHz. Additionally, the device features on-chip protection circuitry with overcurrent, thermal protection and overtemperature protections.