MP6K31TR Allicdata Electronics

MP6K31TR Discrete Semiconductor Products

Allicdata Part #:

MP6K31TR-ND

Manufacturer Part#:

MP6K31TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 60V 2A MPT6
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 2A 2W Surface ...
DataSheet: MP6K31TR datasheetMP6K31TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *K31
Supplier Device Package: MPT6
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MP6K31TR Application Field and Working Principle

MP6K31TR is a transistor array of MOSFETs (Metal-Ox ide-Semiconductor Field Effect Transistors). It is a reliable and low-cost integrated circuit employed mainly in power-management applications. It consists of four dual n-channel MOSFETs, forming a total of eight MOSFETs in a single package. Its primary function is to power switch and control, meaning it allows power to flow in one direction according to the specified voltage and current values.

Application Field of MP6K31TR

MP6K31TR is employed in a number of applications, such as:

  • Power converters
  • DC-DC voltage regulators
  • Switching power supply controllers
  • Power supply circuits
  • Power supply over-current protection and management
  • High-power switching circuit
  • DC motors and solenoids
  • Power switch and voltage-controlled circuits

Working Principle

MP6K31TR is a high-power switching device, meaning it can control the current and voltage of a device by providing the gate voltage. It works on the principle of field effect, wherein the current flow between the source and drain terminals is affected by the bias on the gate terminal. As the gate-source voltage increases, the current between the source and drain terminals increases exponentially.

It can be connected in either parallel or series. When connected in parallel, the total current capacity of the MP6K31TR will increase, while when connected in series, the total voltage capacity will increase.

The dual N-Channel MOSFETs in the MP6K31TR can be controlled either by gate-source voltage or by digital signals. By adjusting the gate-source voltage, the devices can provide high-current switching and power control in different applications.

The MOSFETs also provide protection from high voltage and current surges, as well as ESD (Electrostatic Discharge) protection. Since it is a low-cost and compact device, it is commonly employed for power management applications in consumer and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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