MP6M11TCR

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The MP6M11TCR is a type of transistor array designed and commercialized by Everspin. It is a single-channel, high-speed, non-volatile magnetoresistive random-access memory (MRAM) array optimized for the software-defined radio (SDR) market. It is based on a flowable gate-oxide-free magnetic tunnel junction (FTJ) technology and combines a non-volatile memory array with an 10-bit high-speed Flash Analog-to-Digital Converter (ADC) and a level shifter. This type of transistor array can be used to provide an extremely fast, low-power, and reliable memory solution, particularly in applications where read-write endurance and data-retention requirements need to be met.

The typical application fields of an MP6M11TCR transistor array are those where high-speed data acquisition and data storage and retrieval is required. SDR applications are a primary area of usage, where such transistors can provide a heightened processing capability and greater flexibility. The use of this type of array in software-defined radio applications depends largely on its ability to process and store large amounts of data quickly and reliably, effectively predicting and mitigating against potential data loss.

Thus, MP6M11TCR transistors arrays provide a robust and reliable system for SDR applications due to the increased speed of data processing that the array provides. Additionally, related applications include automation systems, medical devices, gaming systems, and other applications. The device is suitable for use with either 5V or 3V analog and logic signals.

The working principle of MP6M11TCR array is based on FTJ (Flowable Gate-oxide-Free Magnetic Tunnel Junction) technology. It is a non-volatile memory array with a 10-bit high-speed Flash Analog-to-Digital Converter (ADC) and a level shifter. FTJ technology is enabled by a flowable electrolyte that allows the use of a thinner dielectric layer between the source and drain. This thinner layer reduces electron tunneling, allowing the transistor to have a significantly lower "on" resistance than traditional MOSFET transistors. FTJ technology provides non-volatile memory operation, increasing data retention times and reducing power consumption as compared to traditional MOSFET arrays. Furthermore, its non-volatile nature means that it can store data even when power is off.

In addition to its FTJ technology, the MP6M11TCR applications also benefit from its 10-bit ADC, which converts analog signals into digital data, and its built-in level shifter, which maintains signal integrity in despite of voltage differences. The level shifter also prevents ground loops and reduces power consumption. The highly reliable and high-speed operation of the MP6M11TCR transistor array makes it the ideal choice for applications requiring high-speed data acquisition and data storage and retrieval capabilities.

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