| Allicdata Part #: | MP6M12TCRTR-ND |
| Manufacturer Part#: |
MP6M12TCR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N/P-CH 30V 5A MPT6 |
| More Detail: | Mosfet Array N and P-Channel 30V 5A 2W Surface Mou... |
| DataSheet: |  MP6M12TCR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 5A |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 10V |
| Power - Max: | 2W |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-SMD, Flat Leads |
| Supplier Device Package: | MPT6 |
| Base Part Number: | *M12 |
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MP6M12TCR Application Field and Working Principle
MP6M12TCR belongs to a kind of transistor-based electronic component, namely FETs (Field Effect Transistors). Thus, it has a wide range of applications in modern electronics, mainly including: microcontrollers and general logic circuits, automotive instruments, industrial fields, and communications.
As a field effect transistor, MP6M12TCR consists of two parts: Gate and Source. The Gate is a semiconductor layer, while the Source is a metal oxide layer that is applied on top of the Gate. The Gate will create a field effect when power is applied to it. This allows a current to travel through the Gate and Source layers to the output of the device. The current will then be amplified by the Gate and transferred to the output.
It should be noted that the MP6M12TCR is an FET array, meaning that it contains multiple transistors connected in a particular way. Each of the individual transistors has a Gate and a Source, but when multiple transistors are connected in this way, the Gate\'s fields are combined and amplified, resulting in a stronger field which can produce a larger current.
The working principle of MP6M12TCR is quite simple. The Gate is connected to a voltage source, and when a small current is supplied, this will cause a field effect in the Gate. As the current travels through the Gate, it is amplified by the combined field of all of the gates connected to the device. This produces a larger current in the higher voltage application. The amplified current is then supplied to the output of the device, providing a larger voltage and current than the voltage source supplied it with.
In conclusion, the MP6M12TCR is a type of FET array, which is used in numerous modern electronic systems. It consists of two parts, a Gate and a Source, and when a current is supplied to the Gate, it is amplified by the fields of each of the connected Gates. The larger current is then supplied to the output of the device, providing a larger voltage and current than the voltage source supplied it with.
The specific data is subject to PDF, and the above content is for reference
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