MR752-BP

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	6A
Voltage - Forward (Vf) (Max) @ If:	900mV @ 6A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	25µA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	Button, Axial
Supplier Device Package:	Leaded Button
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	MR752

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Introduction

MR752-BP is a kind of single rectifier diodes. It serves in a variety of applications such as voltage regulation, circuit protection, switching, and rectification. The epitaxial planar-passivated chip provides extremely good avalanche characteristics, making it suitable for applications where dynamic diodes need to be employed. It has been widely employed in commercial, industrial and automotive applications for many years.

Application Fields

MR752-BP single rectifier diodes are utilized in commercial, industrial, and automotive applications that involve the use of dynamic diodes. In commercial and industrial applications, the diodes can be used to regulate the voltage and prevent overvoltage in power supply systems. They are also suitable for circuit protection, switching, and rectification. The diodes can be utilized in consumers electronics and displays, such as LCDs, LED displays, and Plasma displays. In automobiles, the MR752-BP single rectifier diodes can be used in automotive voltage regulation and as power converters.

Working Principle

MR752-BP single rectifier diodes are made up of two p-n junctions which are isolated from each other by a thin oxide layer. This oxide layer serves as an electric field that allows an electric current to flow in one direction, while blocking the flow of current in the opposite direction. When a voltage is applied across the diode, the electrons in the conduction band of the n-type material are attracted to the holes in the valence band of the p-type material. This process is known as forward bias and allows current to flow through the junction.In the reverse bias condition, the electric current does not flow. In this condition, the electric field associated with the oxide layer provides a barrier to the flow of electrons. This process is known as junction breakdown and it provides protection to the circuit by preventing the current from exceeding a certain level.

Conclusion

MR752-BP single rectifier diodes are extensively used in a variety of commercial, industrial, and automotive applications. The diodes employ two p-n junctions which are isolated by a thin oxide layer. In the forward bias condition, the electrons in the conduction band of the n-type material are attracted to the holes in the valence band of the p-type material, allowing an electric current to flow. In the reverse bias condition, the electric field associated with the oxide layer provides a barrier to the flow of electrons. This process provides circuit protection and prevents the current from exceeding a certain level.

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