MR752RL Discrete Semiconductor Products |
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Allicdata Part #: | MR752RLOSTR-ND |
Manufacturer Part#: |
MR752RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GP 200V 6A MICRODE BUTTON |
More Detail: | Diode Standard 200V 6A Through Hole Microde Button |
DataSheet: | MR752RL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 25µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Button, Axial |
Supplier Device Package: | Microde Button |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MR752 |
Description
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MR752 RL Application Field and Working Principle
The MR752RL is a three-terminal diode with applications in the fields of power supply, voltage regulation, and pulse power circuits. Part of a wide family of diode-bridges, it is a premount diode bridge type with a low voltage drop and low current capacity. While popular in industrial and automotive electronics, it is particularly suited for applications in the medical and aerospace markets. The MR752RL utilizes Schottky barrier diodes to achieve its low voltage and current capacity. These diodes feature an extremely small effective junction capacitance, making them attractive for high-frequency circuits. The low voltage drop across the diode makes them particularly attractive in situations where power loss must be minimized. The MR752RL also offers excellent reliability and resistance to environmental degradation. The diode-bridge is rated to withstand ambient temperatures of up to 150°C and features an extended MTTF rating of 157,000 hours. It is designed to resist high transient voltages and currents, and it is vibration tolerant. The MR752RL is available in a range of sizes and voltage ratings, with a peak reverse voltage of up to 600V and a peak forward current of 10A. The low-inductance design makes it particularly well suited for use in high frequency, high pulsed current applications. The basic working principle of the MR752RL is that it utilizes the Schottky barrier principle to create a low-impedance, high-reliability diode-bridge. A Schottky diode is a two-terminal semiconductor device, consisting of a metal-semiconductor junction that forms a barrier at the junction. This barrier has a lower barrier vertical electric field than a normal PN junction diode, which allows for more efficient current conduction. The MR752RL diode bridge operates by connecting its two positive terminals in series and its two negative terminals in series. This forms a bridge between the two pairs of terminals, and when a voltage is applied across the two pairs, current is conducted through the diodes. This current is limited by the resistance of the diodes, and therefore the voltage drop across the diodes is minimized. The bridge alsolimits the amount of current that can flow through it. Both forward and reverse current are prevented from flowing through it, as the current is limited by the resistance of the diode bridge. This enables the diode bridge to provide reliable voltage regulation and power supply. In conclusion, the MR752RL diode bridge is a widely used, reliable and cost-effective solution for high frequency, high pulsed current applications. Its small effective junction capacitance, low voltage drop and resistance to environmental degradation make it ideal for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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