Allicdata Part #: | MR756GOS-ND |
Manufacturer Part#: |
MR756G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GP 600V 6A MICRODE BUTTON |
More Detail: | Diode Standard 600V 6A Through Hole Microde Button |
DataSheet: | MR756G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 25µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Button, Axial |
Supplier Device Package: | Microde Button |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MR756 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are an integral part of any electronic circuit and are used in a wide variety of applications ranging from power conversion to signal isolation. The MR756G single diode rectifier is a perfect solution for applications where cost-effective, reliable power conversion and signal isolation are required.
The MR756G single diode is designed to convert AC to DC current, which allows for the regulation of a wide range of electrical signals. The diode can be used for both power conversion and signal isolation, meaning that it can be used as a power supply for various types of electrical equipment as well as for protecting electrical circuits from interference. The MR756G single diode has a low forward voltage drop and a high surge capability, which allows it to handle a wide range of input voltages.
The MR756G single diode is an efficient solution for applications such as power conversion, signal isolation, and voltage regulation. The diode is designed to work at a wide range of temperatures, meaning that it is an ideal solution for applications that require reliable performance in both hot and cold conditions. The diode is also designed to have a long lifespan, making it a great choice for applications that require consistent performance over time.
The diode is constructed using a ceramic body and a dielectric insulator that contains a metal oxide semiconductor (MOS) layer. This MOS layer allows current to pass through the diode, but in order for this to happen, a voltage is required across the two terminals of the diode. This voltage is known as the forward voltage and is the voltage that is applied across the diode when the diode is forward biased. When the diode is negatively biased, no current can flow and the diode is said to be in a blocking state.
When a voltage is applied in the correct direction, the diode begins to conduct, allowing current to flow through it. The more voltage that is applied across the diode, the higher the current that can flow, meaning that the diode is capable of handling higher voltages and greater currents. This makes the MR756G single diode an ideal choice for applications where power conversion is required.
The MR756G single diode is also designed with a high surge capability, meaning that it can handle a large amount of current passing through it at one time. This makes it an ideal choice for applications where a large amount of power is needed quickly, such as in power supplies or when a large amount of power is required to start an appliance or motor. The diode is also designed to be capable of withstanding high voltage spikes and fluctuations, ensuring reliable and consistent performance.
The MR756G single diode is an efficient and reliable solution for AC to DC power conversion and signal isolation. It is designed to work reliably in a wide range of temperatures and to tolerate high voltage spikes and fluctuations. This makes it an ideal choice for applications where cost-effective, reliable power conversion and signal isolation are required.
The specific data is subject to PDF, and the above content is for reference
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MR751RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 100V 6A MICRODE ... |
MR756 | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 600V 6A MICRODE ... |
MR754 | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 400V 6A MICRODE ... |
MR754G | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 400V 6A MICRODE ... |
MR756G | ON Semicondu... | -- | 1000 | DIODE GP 600V 6A MICRODE ... |
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MR751RLG | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 100V 6A MICRODE ... |
MR752RLG | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 200V 6A MICRODE ... |
MR754RLG | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 400V 6A MICRODE ... |
MR756RLG | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 600V 6A MICRODE ... |
MR750 | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 50V 6A MICRODE B... |
MR750G | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 50V 6A MICRODE B... |
MR751 | ON Semicondu... | -- | 1000 | DIODE GP 100V 6A MICRODE ... |
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MR752 | ON Semicondu... | 0.0 $ | 1000 | DIODE GP 200V 6A MICRODE ... |
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MR756-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GP 600V 6A LEADED B... |
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