Allicdata Part #: | 568-13867-ND |
Manufacturer Part#: |
MRFX1K80H-27MHZ |
Price: | $ 0.69 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | MRFX1K80H 27MHZ REF DESIGN BRD |
More Detail: | N/A |
DataSheet: | MRFX1K80H-27MHZ Datasheet/PDF |
Quantity: | 3 |
1 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
Type: | Transistor |
Frequency: | 27MHz |
For Use With/Related Products: | MRFX1K80H |
Supplied Contents: | Board(s) |
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RF Evaluation and Development Kits, Boards are vital for modern electronic development. MRFX1K80H-27MHZ is a popular example from one such category.
Technically, MRFX1K80H-27MHZ is an Radio Frequency (RF) power MOSFET device. The device is applicable for industrial, cellular, satellite communications, consumer electronics, medical and automotive applications. MRFX1K80H-27MHZ can operate at frequencies as high as 27MHz and can produce up to 1KW RF power output. It is highly efficient, providing typical drain efficiency of around 87%.
MRFX1K80H-27MHZ can also be used in TX and RX applications, providing support for both analog and digital modulation. It also supports single and multiple carrier switching applications with its wide bandwidth capabilities. It features a robust gate drive circuitry and a very low input impedance which provides stable operation over a wide range of frequencies.
MRFX1K80H-27MHz also has several key advantages over other products in the market. Firstly, it offers a high frequency response with a large bandwidth. This makes it ideal for applications that require an uninterrupted transmission or reception. Secondly, its low drain-source on-resistance allows for optimal efficiency, especially in high power applications. Thirdly, its low gate drive requirements and high thermal efficiency make it suitable for high speed switching applications. Finally, it is capable of providing greater power output than other devices without any additional losses.
The working principle of MRFX1K80H-27MHz is quite simple. When the gate voltage increases, the resistance between the source and drain terminals decreases, allowing higher current to flow. This phenomenon is called depletion. The higher the voltage is applied to the gate terminal, the more current is allowed to flow between the source and drain terminals, thus increasing the output power.
MRFX1K80H-27MHz is designed specifically for high power applications. Its internal circuitry is specially designed to provide a robust gate drive circuitry and a very low input impedance which makes it suitable for operation at frequencies as high as 27MHz. Its drain efficiency and low input resistance makes it ideal for efficient use in high power applications.
MRFX1K80H-27MHz is an ideal choice for a range of industrial, cellular, satellite communications, consumer electronics, medical and automotive applications. It is capable of delivering high power output at frequencies up to 27MHz with its cutting edge gate and drain circuitry. Its high efficiency and low input impedance make it the ideal choice for efficiently powering high power applications.
The specific data is subject to PDF, and the above content is for reference
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