Allicdata Part #: | 568-13883-2-ND |
Manufacturer Part#: |
MRFX1K80NR5 |
Price: | $ 178.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | 600MHZ 1.8KW OM1230-4L |
More Detail: | RF Mosfet LDMOS 65V 1.8MHz ~ 470MHz 24dB 1800W OM... |
DataSheet: | MRFX1K80NR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 162.48600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.8MHz ~ 470MHz |
Gain: | 24dB |
Voltage - Test: | 65V |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | 1800W |
Package / Case: | OM-1230-4L |
Supplier Device Package: | OM-1230-4L |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRFX1K80NR5 is a specific type of transistors – FETs, MOSFETs – RF, a new generation of ultra high-speed switching that is suitable for a range of applications requiring fast response time and low on-resistance. It is designed for use in high-frequency switching applications operating at frequencies of up to 15 GHz. The MRFX1K80NR5 is based on the MOSFET process technology. It is well suited for use in industrial applications, such as Motor control, Automation, Robotics, and RF communications. The device is lead free and halogen free.
The MRFX1K80NR5 has a wide variety of uses that range from DC-DC converters, power supplies and inverters, to hard switching loads and switching power amplifiers. It also finds application in a variety of consumer electronics such as LED lighting, as well as a range of other consumer appliances. The MRFX1K80NR5 is available in a variety of package sizes ranging from a small SOT-23 package to a larger D 2 PAK. The chip features low on-resistance and the ability to switch large currents with high frequency.
The MRFX1K80NR5 operates through a DelcrosaFET process, which has proven to provide excellent performance and is used in a variety of fields. The process uses a dielectric layer to isolate a MOSFET from the surface on which it is resting to ensure low on-resistance and improved RF performance. The integrated internal circuitry of the MRFX1K80NR5 ensures protection against ESD damage and provides electrical overstress protection up to 8V. It also features high speed switching and fast rise and fall times.
The MRFX1K80NR5 works through a Push-Pull type configuration, where the transistor acts as a switch that can be activated to create current flow. The gate pin provides the voltage to turn the transistor on and off. When the gate voltage is above the gate threshold voltage, the transistor turns on, allowing current to flow through it. When the gate voltage is below the gate threshold voltage, the transistor is turned off and allows no current to pass through. It is important to ensure that the gate voltage is stable and does not fluctuate for efficient and reliable operation of the MRFX1K80NR5.
The MRFX1K80NR5 is an ideal choice for applications requiring extremely low on-resistance and high-frequency switching. It provides a versatile solution for a range of applications, from industrial applications to consumer electronics. The device is lead-free, halogen-free, and is available in a range of package sizes in order to suit different application requirements. It is designed to provide reliable and efficient operation while being able to support current levels up to 50A and frequencies up to 15GHz. Its carefully constructed design enables it to provide improved performance and reliability over other transistors.
The specific data is subject to PDF, and the above content is for reference
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