MRFX1K80GNR5 Allicdata Electronics
Allicdata Part #:

MRFX1K80GNR5-ND

Manufacturer Part#:

MRFX1K80GNR5

Price: $ 178.73
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: 600MHZ 1.8KW OM1230G-4L
More Detail: RF Mosfet LDMOS 65V 1.8MHz ~ 470MHz 24dB 1800W OM...
DataSheet: MRFX1K80GNR5 datasheetMRFX1K80GNR5 Datasheet/PDF
Quantity: 1000
50 +: $ 162.48600
Stock 1000Can Ship Immediately
$ 178.73
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.8MHz ~ 470MHz
Gain: 24dB
Voltage - Test: 65V
Current Rating: --
Noise Figure: --
Power - Output: 1800W
Package / Case: OM-1230G-4L
Supplier Device Package: OM-1230G-4L
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRFX1K80GNR5 is a high voltage and high speed N-channel Metal-Oxide-Field-Transistor (MOSFET) incorporated in an insulated gate cell structure suitable for RF switching purposes.

MRFX1K80GNR5 is designed for RF transmission line protection and as an integrated switch-cell. It offers low on-resistance, low power consumption, and a high level of robustness for its intended applications. The MOSFET consists of a P-type substrate, an N-type body, a gate oxide layer and a P-type gate which acts as a field-effect tunnel diode. The N-type body is connected to the drain and serves as the main carrier of current.

MRFX1K80GNR5 is a versatile device with a wide variety of application fields. It can be used in home electronics and mobile devices such as smartphones and tablets, as well as in telecommunications and computers. It can be used as a power switch, logic control, amplifier, and RF protection device.

The working principle of MRFX1K80GNR5 is based on the interaction between an electric field and the electrons in the N-type body. By applying an electric field to the gate, the resistance of the N-type body can be altered. This allows the current to flow between the source and drain, thus enabling electrical signal control. MRFX1K80GNR5 is capable of switching at very high speeds, with switching times as short as 0.1 nanoseconds.

Overall, MRFX1K80GNR5 is a reliable and robust MOSFET which can be used in a variety of applications. It is a suitable choice for RF switching purposes and offers excellent switching speeds. Its insulated gate cell structure and high level of robustness make it a highly efficient and reliable device for its intended purpose.

The specific data is subject to PDF, and the above content is for reference

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